The DOI matches its Crossref record; 32 of the 32 references it cites were found in a registry or an index.
Controllable N-Doping of Graphene
Abstract
Opening and tuning an energy gap in graphene are central to many electronic applications of graphene. Here we report N-doped graphene obtained by NH3 annealing after N(+)-ion irradiation of graphene samples. First, the evolution of the graphene microstructure was investigated following N(+)-ion irradiation at different fluences using Raman spectroscopy, showing that defects were introduced in plane after irradiation and then restored after annealing in N2 or in NH3. Auger electron spectroscopy (AES) of the graphene annealed in NH3 after irradiation showed N signal, however, no N signal was observed after annealing in N2. Last, the field-effect transistor (FET) was fabricated using N-doped graphene and monitored by the source-drain conductance and back-gate voltage (Gsd-Vg) curves in the measurement. The transport property changed compared to that of the FET made by intrinsic graphene, that is, the Dirac point position moved from positive Vg to negative Vg, indicating the transition of graphene from p-type to n-type after annealing in NH3. Our approach, which provides a physical mechanism for the introduction of defect and subsequent hetero dopant atoms into the graphene material in a controllable fashion, will be promising for producing graphene-based devices for multiple applications.
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Cites
Electric Field Effect in Atomically Thin Carbon Films
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Raman Spectrum of Graphene and Graphene Layers
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Superior Thermal Conductivity of Single-Layer Graphene
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Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
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Cited by
Wang, H., Maiyalagan, T., & Wang, X. (2012) · ACS Catalysis · doi:10.1021/cs200652y · Cited by 3,618
Metal-Free Catalysts for Oxygen Reduction Reaction
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Connecting Dopant Bond Type with Electronic Structure in N-Doped Graphene
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Metadata
- Authors
- Guo, B., Liu, Q., Chen, E., Zhu, H., Fang, L., & Gong, J. R.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2010-10-22
- Volume
- 10
- Issue
- 12
- Pages
- 4975-4980
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2163740494
- Cited by
- 854
- References
- 32
- FWCI
- 25.95
- Type
- journal article
- Language
- en
- Open access
- closed
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