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Cited by 3,460

The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.

Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

Open access
Morozov, S. V., Novoselov, K. S., Katsnelson, M. I., Schedin, F., Elias, D. C., Jaszczak, J. A., Geim, A. K.·2008·Physical Review Letters

Abstract

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.

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Crossref · 10.1103/physrevlett.100.016602

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Metadata

Authors
Morozov, S. V., Novoselov, K. S., Katsnelson, M. I., Schedin, F., Elias, D. C., Jaszczak, J. A., & Geim, A. K.
Venue
Physical Review Letters
Published
2008-01-07
Volume
100
Issue
1
Pages
016602-016602
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W2080880982
Cited by
3,460
References
7
FWCI
90.94
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer. https://app.cochat.ai/papers/10.1103/physrevlett.100.016602
The paper
Morozov, S. V., Novoselov, K. S., Katsnelson, M. I., Schedin, F., Elias, D. C., Jaszczak, J. A., & Geim, A. K. (2008). Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer. Physical Review Letters. https://doi.org/10.1103/physrevlett.100.016602

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