The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Formation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition
Abstract
We report the epitaxial formation of bilayer Bernal graphene on copper foil via chemical vapor deposition. The self-limit effect of graphene growth on copper is broken through the introduction of a second growth process. The coverage of bilayer regions with Bernal stacking can be as high as 67% before further optimization. Facilitated with the transfer process to silicon/silicon oxide substrates, dual-gated graphene transistors of the as-grown bilayer Bernal graphene were fabricated, showing typical tunable transfer characteristics under varying gate voltages. The high-yield layer-by-layer epitaxy scheme will not only make this material easily accessible but reveal the fundamental mechanism of graphene growth on copper.
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Citations
Cites
Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
Castro, E. V., Novoselov, K. S., Morozov, S. V., Peres, N. M. R., dos Santos, J. M. B. L., Nilsson, J., Guinea, F., Geim, A. K., & Neto, A. H. C. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.216802 · Cited by 2,033
Cited by
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
The edge- and basal-plane-specific electrochemistry of a single-layer graphene sheet
Yuan, W., Zhou, Y., Li, Y., Li, C., Peng, H., Zhang, J., Liu, Z., Dai, L., & Shi, G. (2013) · Scientific Reports · doi:10.1038/srep02248 · Cited by 527
Self-citationGuermoune, A., Chari, T., Popescu, F., Sabri, S. S., Guillemette, J., Skulason, H. S., Szkopek, T., & Siaj, M. (2011) · Carbon · doi:10.1016/j.carbon.2011.05.054 · Cited by 351
Growth of Bilayer Graphene on Insulating Substrates
Yan, Z., Peng, Z., Sun, Z., Yao, J., Zhu, Y., Liu, Z., Ajayan, P. M., & Tour, J. M. (2011) · ACS Nano · doi:10.1021/nn202829y · Cited by 301
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Metadata
- Authors
- Yan, K., Peng, H., Zhou, Y., Li, H., & Liu, Z.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2011-02-15
- Volume
- 11
- Issue
- 3
- Pages
- 1106-1110
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2046148813
- Cited by
- 419
- References
- 1
- FWCI
- 17.82
- Type
- journal article
- Language
- en
- Open access
- closed
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