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Cited by 1,451

The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.

Tunable Bandgap in Silicene and Germanene

Ni, Zeyuan, Liu, Qihang, Tang, Kechao, Zheng, Jiaxin, Zhou, Jing, Qin, Rui, Gao, Zhengxiang, Yu, Dapeng, Lu, Jing·2012·Nano Letters

Abstract

By using ab initio calculations, we predict that a vertical electric field is able to open a band gap in semimetallic single-layer buckled silicene and germanene. The sizes of the band gap in both silicene and germanene increase linearly with the electric field strength. Ab initio quantum transport simulation of a dual-gated silicene field effect transistor confirms that the vertical electric field opens a transport gap, and a significant switching effect by an applied gate voltage is also observed. Therefore, biased single-layer silicene and germanene can work effectively at room temperature as field effect transistors.

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Crossref · 10.1021/nl203065e

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Metadata

Authors
Ni, Z., Liu, Q., Tang, K., Zheng, J., Zhou, J., Qin, R., Gao, Z., Yu, D., & Lu, J.
Venue
Nano Letters
Published
2011-12-21
Volume
12
Issue
1
Pages
113-118
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W1996930412
Cited by
1,451
References
7
FWCI
30.52
Type
journal article
Language
en
Open access
closed

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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.