The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.
Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
Open accessAbstract
We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Self-citationGeim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Self-citationThe electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
Self-citationGraphene: Status and Prospects
Geim, A. K. (2009) · Science · doi:10.1126/science.1158877 · Cited by 13,942
Self-citationTwo-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Self-citationBoron nitride substrates for high-quality graphene electronics
Dean, C. R., Young, A. F., Meric, I., Lee, C., Wang, L., Sorgenfrei, S., Watanabe, K., Taniguchi, T., Kim, P., Shepard, K. L., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2010.172 · Cited by 7,124
Simmons, J. G. (1963) · Journal of Applied Physics · doi:10.1063/1.1702682 · Cited by 4,200
Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
Britnell, L., Gorbachev, R. V., Jalil, R., Belle, B. D., Schedin, F., Mishchenko, A., Georgiou, T., Katsnelson, M. I., Eaves, L., Morozov, S. V., et al. (2012) · Science · doi:10.1126/science.1218461 · Cited by 2,561
Self-citationMicrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature
Mayorov, A. S., Gorbachev, R. V., Morozov, S. V., Britnell, L., Jalil, R., Ponomarenko, L. A., Blake, P., Novoselov, K. S., Watanabe, K., Taniguchi, T., et al. (2011) · Nano Letters · doi:10.1021/nl200758b · Cited by 1,672
Self-citationHunting for Monolayer Boron Nitride: Optical and Raman Signatures
Gorbachev, R. V., Riaz, I., Nair, R. R., Jalil, R., Britnell, L., Belle, B. D., Hill, E. W., Novoselov, K. S., Watanabe, K., Taniguchi, T., et al. (2011) · Small · doi:10.1002/smll.201001628 · Cited by 1,151
Self-citationNobel Lecture: Graphene: Materials in the Flatland
Novoselov, K. S. (2011) · Reviews of Modern Physics · doi:10.1103/revmodphys.83.837 · Cited by 838
Self-citationTunable metal–insulator transition in double-layer graphene heterostructures
Ponomarenko, L. A., Geim, A. K., Zhukov, A. A., Jalil, R., Morozov, S. V., Novoselov, K. S., Grigorieva, I. V., Hill, E. H., Cheianov, V. V., Fal’ko, V. I., et al. (2011) · Nature Physics · doi:10.1038/nphys2114 · Cited by 551
Self-citationEffect of a High-κEnvironment on Charge Carrier Mobility in Graphene
Ponomarenko, L. A., Yang, R., Mohiuddin, T. M., Katsnelson, M. I., Novoselov, K. S., Morozov, S. V., Zhukov, A. A., Schedin, F., Hill, E. W., & Geim, A. K. (2009) · Physical Review Letters · doi:10.1103/physrevlett.102.206603 · Cited by 384
Self-citationTunneling spectroscopy of graphene-boron-nitride heterostructures
Amet, F., Williams, J. R., Garcia, A. G. F., Yankowitz, M., Watanabe, K., Taniguchi, T., & Goldhaber‐Gordon, D. (2012) · Physical Review B · doi:10.1103/physrevb.85.073405 · Cited by 79
Cited by
Graphene and boron nitride lateral heterostructures for atomically thin circuitry
Levendorf, M. P., Kim, C.-J., Brown, L., Huang, P. Y., Havener, R. W., Muller, D. A., & Park, J. (2012) · Nature · doi:10.1038/nature11408 · Cited by 855
Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures
Mishchenko, A., Tu, J. S., Cao, Y., Gorbachev, R. V., Wallbank, J. R., Greenaway, M. T., Morozov, V. E., Morozov, S. V., Zhu, M. J., Wong, S. L., et al. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.187 · Cited by 517
Self-citationKnobloch, T., Illarionov, Y. Y., Ducry, F., Schleich, C., Wachter, S., Watanabe, K., Taniguchi, T., Mueller, T., Waltl, M., Lanza, M., et al. (2021) · Nature Electronics · doi:10.1038/s41928-020-00529-x · Cited by 367
Local Electronic Properties of Corrugated Silicene Phases
Chiappe, D., Grazianetti, C., Tallarida, G., Fanciulli, M., & Molle, A. (2012) · Advanced Materials · doi:10.1002/adma.201202100 · Cited by 304
Palumbo, F., Wen, C., Lombardo, S., Pazos, S., Aguirre, F., Eizenberg, M., Hui, F., & Lanza, M. (2020) · Advanced Functional Materials · doi:10.1002/adfm.201900657 · Cited by 268
Metadata
- Authors
- Britnell, L., Gorbachev, R. V., Jalil, R., Belle, B. D., Schedin, F., Katsnelson, M. I., Eaves, L., Morozov, S. V., Mayorov, A. S., Peres, N. M. R., Castro Neto, A. H., Leist, J., Geim, A. K., Ponomarenko, L. A., & Novoselov, K. S.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2012-03-01
- Volume
- 12
- Issue
- 3
- Pages
- 1707-1710
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2018765018
- Cited by
- 916
- References
- 14
- FWCI
- 25.92
- Type
- journal article
- Language
- en
- Open access
- green
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.