The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Tunable metal–insulator transition in double-layer graphene heterostructures
Open accessAbstract
Disordered conductors with resistivity above the resistance quantum h/e(2) should exhibit an insulating behaviour at low temperatures, a universal phenomenon known as a strong (Anderson) localization(1-3). Observed in a multitude of materials, including damaged graphene and its disordered chemical derivatives(4-10), Anderson localization has not been seen in generic graphene, despite its resistivity near the neutrality point reaching approximate to h/e(2) per carrier type(4,5). It has remained a puzzle why graphene is such an exception. Here we report a strong localization and the corresponding metal-insulator transition in ultra-high-quality graphene. The transition is controlled externally, by changing the carrier density in another graphene layer placed at a distance of several nm and decoupled electrically. The entire behaviour is explained by electron-hole puddles that disallow localization in standard devices but can be screened out in double-layer graphene. The localization that occurs with decreasing rather than increasing disorder is a unique occurrence, and the reported double-layer heterostructures presents a new experimental system that invites further studies.
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Cites
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Self-citationThe electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
Self-citationChiral tunnelling and the Klein paradox in graphene
Katsnelson, M. I., Novoselov, K. S., & Geim, A. K. (2006) · Nature Physics · doi:10.1038/nphys384 · Cited by 3,896
Self-citationDisorder effects in two-dimensional d-wave superconductors
Nersesyan, A. A., Tsvelik, A. M., & Wenger, F. (1994) · Physical Review Letters · doi:10.1103/physrevlett.72.2628 · Cited by 226
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Metadata
- Authors
- Ponomarenko, L. A., Geim, A. K., Zhukov, A. A., Jalil, R., Morozov, S. V., Novoselov, K. S., Grigorieva, I. V., Hill, E. H., Cheianov, V. V., Fal’ko, V. I., Watanabe, K., Taniguchi, T., & Gorbachev, R. V.
- Venue
- Nature Physics
- Published
- 2011-10-09
- Volume
- 7
- Issue
- 12
- Pages
- 958-961
- ISSN
- 1745-2473 (ISSN-L)
- 1745-2481
- OpenAlex
- W2006717333
- Cited by
- 551
- References
- 4
- FWCI
- 26.65
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Ponomarenko, L. A., Geim, A. K., Zhukov, A. A., Jalil, R., Morozov, S. V., Novoselov, K. S., Grigorieva, I. V., Hill, E. H., Cheianov, V. V., Fal’ko, V. I., Watanabe, K., Taniguchi, T., & Gorbachev, R. V. (2011). Tunable metal–insulator transition in double-layer graphene heterostructures. Nature Physics. https://doi.org/10.1038/nphys2114
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
