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Ferroelectricity in Simple Binary ZrO2 and HfO2
Abstract
The transition metal oxides ZrO(2) and HfO(2) as well as their solid solution are widely researched and, like most binary oxides, are expected to exhibit centrosymmetric crystal structure and therewith linear dielectric characteristics. For this reason, those oxides, even though successfully introduced into microelectronics, were never considered to be more than simple dielectrics possessing limited functionality. Here we report the discovery of a field-driven ferroelectric phase transition in pure, sub 10 nm ZrO(2) thin films and a composition- and temperature-dependent transition to a stable ferroelectric phase in the HfO(2)-ZrO(2) mixed oxide. These unusual findings are attributed to a size-driven tetragonal to orthorhombic phase transition that in thin films, similar to the anticipated tetragonal to monoclinic transition, is lowered to room temperature. A structural investigation revealed the orthorhombic phase to be of space group Pbc2(1), whose noncentrosymmetric nature is deemed responsible for the spontaneous polarization in this novel, nanoscale ferroelectrics.
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Citations
Cited by
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
Pešić, M., Fengler, F. P. G., Larcher, L., Padovani, A., Schenk, T., Grimley, E. D., Sang, X., LeBeau, J. M., Slesazeck, S., Schroeder, U., et al. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201600590 · Cited by 964
Self-citationA rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films
Wei, Y., Nukala, P., Salverda, M., Matzen, S., Zhao, H. J., Momand, J., Everhardt, A. S., Agnus, G., Blake, G. R., Lecoeur, P., et al. (2018) · Nature Materials · doi:10.1038/s41563-018-0196-0 · Cited by 587
Ning, H., Yu, Z., Zhang, Q., Wen, H., Gao, B., Mao, Y., Li, Y., Zhou, Y., Zhou, Y., Chen, J., et al. (2023) · Nature Nanotechnology · doi:10.1038/s41565-023-01343-0 · Cited by 198
Doped Hf0.5Zr0.5O2 for high efficiency integrated supercapacitors
Lomenzo, P. D., Chung, C.-C., Zhou, C., Jones, J. L., & Nishida, T. (2017) · Applied Physics Letters · doi:10.1063/1.4985297 · Cited by 117
Antiferroelectric oxide thin-films: Fundamentals, properties, and applications
Si, Y., Zhang, T., Liu, C., Das, S., Xu, B., Burkovsky, R. G., Wei, X.-K., & Chen, Z. (2024) · Progress in Materials Science · doi:10.1016/j.pmatsci.2023.101231 · Cited by 84
Metadata
- Authors
- Müller, J., Böscke, T. S., Schröder, U., Mueller, S., Bräuhaus, D., Böttger, U., Frey, L., & Mikolajick, T.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2012-07-23
- Volume
- 12
- Issue
- 8
- Pages
- 4318-4323
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2334220755
- Cited by
- 1,832
- References
- 0
- FWCI
- 13.63
- Type
- journal article
- Language
- en
- Open access
- closed
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- Müller, J., Böscke, T. S., Schröder, U., Mueller, S., Bräuhaus, D., Böttger, U., Frey, L., & Mikolajick, T. (2012). Ferroelectricity in Simple Binary ZrO2 and HfO2. Nano Letters. https://doi.org/10.1021/nl302049k
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