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Tunable Graphene–Silicon Heterojunctions for Ultrasensitive Photodetection

An, Xiaohong, Liu, Fangze, Jung, Yung Joon, Kar, Swastik·2013·Nano Letters

Abstract

We present the photodetection properties of graphene/Si heterojunctions both in the photocurrent and photovoltage modes. Monolayer graphene/Si junctions were found to be excellent weak-signal detectors with photovoltage responsivity exceeding 10(7) V/W and with noise-equivalent-power reaching ∼1 pW/Hz(1/2), potentially capable of distinguishing materials with transmittance, T = 0.9995 in a 0.5 s integration time. In the photocurrent mode, the response was found to remain linear over at least six decades of incident power (P), with tunable responsivity up to 435 mA/W (corresponding to incident photon conversion efficiency (IPCE) > 65%) obtained by layer thickening and doping. With millisecond-scale responses and ON/OFF ratios exceeding 10(4), these photodiodes are highly suitable for tunable and scalable broadband (400 < λ < 900 nm) photodetectors, photometers, and millisecond-response switching, spectroscopic and imaging devices, and further, and are architecturally compatible with on-chip low-power optoelectronics.

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Metadata

Authors
An, X., Liu, F., Jung, Y. J., & Kar, S.
Venue
Nano Letters
Published
2013-02-05
Volume
13
Issue
3
Pages
909-916
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2327908080
Cited by
617
References
2
FWCI
16.73
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Tunable Graphene–Silicon Heterojunctions for Ultrasensitive Photodetection. https://app.cochat.ai/papers/10.1021/nl303682j
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An, X., Liu, F., Jung, Y. J., & Kar, S. (2013). Tunable Graphene–Silicon Heterojunctions for Ultrasensitive Photodetection. Nano Letters. https://doi.org/10.1021/nl303682j

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