The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium
Abstract
We report here the first degenerate n-doping of few-layer MoS2 and WSe2 semiconductors by surface charge transfer using potassium. High-electron sheet densities of ~1.0 × 10(13) cm(-2) and 2.5 × 10(12) cm(-2) for MoS2 and WSe2 are obtained, respectively. In addition, top-gated WSe2 and MoS2 n-FETs with selective K doping at the metal source/drain contacts are fabricated and shown to exhibit low contact resistances. Uniquely, WSe2 n-FETs are reported for the first time, exhibiting an electron mobility of ~110 cm(2)/V·s, which is comparable to the hole mobility of previously reported p-FETs using the same material. Ab initio simulations were performed to understand K doping of MoS2 and WSe2 in comparison with graphene. The results here demonstrate the need of degenerate doping of few-layer chalcogenides to improve the contact resistances and further realize high performance and complementary channel electronics.
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Cites
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
Kresse, G., & Furthmüller, J. (1996) · Physical Review B · doi:10.1103/physrevb.54.11169 · Cited by 123,652
A fast and robust algorithm for Bader decomposition of charge density
Henkelman, G., Arnaldsson, A., & Jónsson, H. (2006) · Computational Materials Science · doi:10.1016/j.commatsci.2005.04.010 · Cited by 10,723
Cited by
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Schmidt, H., Giustiniano, F., & Eda, G. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00275c · Cited by 466
Gold‐Mediated Exfoliation of Ultralarge Optoelectronically‐Perfect Monolayers
Desai, S. B., Madhvapathy, S. R., Amani, M., Kiriya, D., Hettick, M., Tosun, M., Zhou, Y., Dubey, M., Ager, J. W., Chrzan, D., et al. (2016) · Advanced Materials · doi:10.1002/adma.201506171 · Cited by 462
Self-citationChuang, H.-J., Chamlagain, B., Koehler, M., Perera, M. M., Yan, J., Mandrus, D., Tománek, D., & Zhou, Z. (2016) · Nano Letters · doi:10.1021/acs.nanolett.5b05066 · Cited by 426
Metadata
- Authors
- Fang, H., Tosun, M., Seol, G., Chang, T. C., Takei, K., Guo, J., & Javey, A.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2013-04-11
- Volume
- 13
- Issue
- 5
- Pages
- 1991-1995
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2045065560
- Cited by
- 760
- References
- 2
- FWCI
- 33.15
- Type
- journal article
- Language
- en
- Open access
- closed
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