The DOI matches its Crossref record; 13 of the 13 references it cites were found in a registry or an index.
Oxide Heterostructure Resistive Memory
Abstract
Resistive switching devices are widely believed as a promising candidate for future memory and logic applications. Here we show that by using multilayer oxide heterostructures the switching characteristics can be systematically controlled, ranging from unipolar switching to complementary switching and bipolar switching with linear and nonlinear on-states and high endurance. Each layer can be tailed for a specific function during resistance switching, thus greatly improving the degree of control and flexibility for optimized device performance.
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Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Lee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
Ohno, T., Hasegawa, T., Tsuruoka, T., Terabe, K., Gimzewski, J. K., & Aono, M. (2011) · Nature Materials · doi:10.1038/nmat3054 · Cited by 1,793
Observation of conducting filament growth in nanoscale resistive memories
Yang, Y., Gao, P., Gaba, S., Chang, T., Pan, X., & Lu, W. (2012) · Nature Communications · doi:10.1038/ncomms1737 · Cited by 1,208
Self-citationYang, Y. C., Pan, F., Liu, Q., Liu, M., & Zeng, F. (2009) · Nano Letters · doi:10.1021/nl900006g · Cited by 876
Self-citationHigh-Density Crossbar Arrays Based on a Si Memristive System
Jo, S. H., Kim, K.-H., & Lu, W. (2009) · Nano Letters · doi:10.1021/nl8037689 · Cited by 574
Self-citationNanoscale Memory Elements Based on Solid-State Electrolytes
Kozicki, M. N., Park, M., & Mitkova, M. (2005) · IEEE Transactions On Nanotechnology · doi:10.1109/tnano.2005.846936 · Cited by 540
Electrochemical metallization cells—blending nanoionics into nanoelectronics?
Lu, W., Jeong, D. S., Kozicki, M., & Waser, R. (2012) · MRS Bulletin · doi:10.1557/mrs.2012.5 · Cited by 113
Self-citation
Cited by
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
Yang, Y., Gao, P., Li, L., Pan, X., Tappertzhofen, S., Choi, S., Waser, R., Valov, I., & Lu, W. D. (2014) · Nature Communications · doi:10.1038/ncomms5232 · Cited by 667
Self-citationKim, S., Du, C., Sheridan, P., Ma, W., Choi, S., & Lu, W. D. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b00697 · Cited by 603
Self-citationTuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping
Kim, S., Choi, S., Lee, J., & Lu, W. D. (2014) · ACS Nano · doi:10.1021/nn503464q · Cited by 129
Self-citationUtilizing multiple state variables to improve the dynamic range of analog switching in a memristor
Jeong, Y., Kim, S., & Lu, W. D. (2015) · Applied Physics Letters · doi:10.1063/1.4934818 · Cited by 101
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Metadata
- Authors
- Yang, Y., Choi, S., & Lu, W.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2013-06-04
- Volume
- 13
- Issue
- 6
- Pages
- 2908-2915
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2329621429
- Cited by
- 185
- References
- 13
- FWCI
- 14.38
- Type
- journal article
- Language
- en
- Open access
- closed
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
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