Electrochemical metallization cells—blending nanoionics into nanoelectronics?

The missing memristor found

Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,744 · see citing works

Memristor—The Missing Circuit Element

Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268 · see citing works

Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080 · see citing works

Nanoionics-based resistive switching memories

Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923 · see citing works

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010) · Nano Letters · doi:10.1021/nl904092h · Cited by 4,174 · see citing works

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

Ohno, T., Hasegawa, T., Tsuruoka, T., Terabe, K., Gimzewski, J. K., & Aono, M. (2011) · Nature Materials · doi:10.1038/nmat3054 · Cited by 1,793 · see citing works

Complementary resistive switches for passive nanocrossbar memories

Linn, E., Rosezin, R., Kügeler, C., & Waser, R. M. (2010) · Nature Materials · doi:10.1038/nmat2748 · Cited by 1,274 · see citing works

Quantized conductance atomic switch

Terabe, K., Hasegawa, T., Nakayama, T., & Aono, M. (2005) · Nature · doi:10.1038/nature03190 · Cited by 1,211 · see citing works

Electrochemical metallization memories—fundamentals, applications, prospects

Valov, I., Waser, R., Jameson, J. R., & Kozicki, M. N. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/25/254003 · Cited by 921 · see citing works

Overview of candidate device technologies for storage-class memory

Burr, G. W., Kurdi, B. N., Scott, J. C., Lam, C., Gopalakrishnan, K., & Shenoy, R. S. (2008) · IBM Journal of Research and Development · doi:10.1147/rd.524.0449 · Cited by 689 · see citing works

High-Density Crossbar Arrays Based on a Si Memristive System

Jo, S. H., Kim, K.-H., & Lu, W. (2009) · Nano Letters · doi:10.1021/nl8037689 · Cited by 574 · see citing works

Nanoscale Memory Elements Based on Solid-State Electrolytes

Kozicki, M. N., Park, M., & Mitkova, M. (2005) · IEEE Transactions On Nanotechnology · doi:10.1109/tnano.2005.846936 · Cited by 540 · see citing works

CMOL FPGA: a reconfigurable architecture for hybrid digital circuits with two-terminal nanodevices

Strukov, D. B., & Likharev, K. K. (2005) · Nanotechnology · doi:10.1088/0957-4484/16/6/045 · Cited by 506 · see citing works

CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory

Jo, S. H., & Lu, W. (2008) · Nano Letters · doi:10.1021/nl073225h · Cited by 406 · see citing works

Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$

Schindler, C., Thermadam, S. C. P., Waser, R. M., & Kozicki, M. N. (2007) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2007.904402 · Cited by 376 · see citing works

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

Russo, U., Kamalanathan, D., Ielmini, D., Lacaita, A. L., & Kozicki, M. N. (2009) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2009.2016019 · Cited by 319 · see citing works

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

Schindler, C., Staikov, G., & Waser, R. (2009) · Applied Physics Letters · doi:10.1063/1.3077310 · Cited by 307 · see citing works

Programmable Resistance Switching in Nanoscale Two-Terminal Devices

Jo, S. H., Kim, K.-H., & Lu, W. (2009) · Nano Letters · doi:10.1021/nl803669s · Cited by 302 · see citing works

A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories

Lee, M. ‐., Seo, S., Kim, D. ‐., Ahn, S. ‐., Seo, D. H., Yoo, I. ‐., Baek, I. ‐., Kim, D. ‐., Byun, I. ‐., Kim, S. ‐., et al. (2007) · Advanced Materials · doi:10.1002/adma.200601025 · Cited by 234 · see citing works

Electronic transport in Ta2O5 resistive switch

Sakamoto, T., Lister, K., Banno, N., Hasegawa, T., Terabe, K., & Aono, M. (2007) · Applied Physics Letters · doi:10.1063/1.2777170 · Cited by 231 · see citing works

A nonvolatile programmable solid-electrolyte nanometer switch

Kaeriyama, S., Sakamoto, T., Sunamura, H., Mizuno, M., Kawaura, H., Hasegawa, T., Terabe, K., Nakayama, T., & Aono, M. (2005) · IEEE Journal of Solid-State Circuits · doi:10.1109/jssc.2004.837244 · Cited by 217 · see citing works

A Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte

Kozicki, M. N., Gopalan, C., Balakrishnan, M., & Mitkova, M. I. (2006) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2006.880407 · Cited by 216 · see citing works

Bipolar resistive switching in polycrystalline TiO2 films

Tsunoda, K., Fukuzumi, Y., Jameson, J. R., Wang, Z., Griffin, P. B., & Nishi, Y. (2007) · Applied Physics Letters · doi:10.1063/1.2712777 · Cited by 213 · see citing works

Polarity-dependent memory switching and behavior of Ag dendrite in Ag-photodoped amorphous As2S3 films

Hirose, Y., & Hirose, H. (1976) · Journal of Applied Physics · doi:10.1063/1.322942 · Cited by 203 · see citing works

Low current resistive switching in Cu–SiO2 cells

Schindler, C., Weides, M. P., Kozicki, M. N., & Waser, R. M. (2008) · Applied Physics Letters · doi:10.1063/1.2903707 · Cited by 200 · see citing works

Rewritable Switching of One Diode–One Resistor Nonvolatile Organic Memory Devices

Cho, B., Kim, T., Song, S., Ji, Y., Jo, M., Hwang, H., Jung, G. Y., & Lee, T. (2009) · Advanced Materials · doi:10.1002/adma.200903203 · Cited by 191 · see citing works

Nanoscale resistive memory with intrinsic diode characteristics and long endurance

Kim, K.-H., Hyun Jo, S., Gaba, S., & Lu, W. (2010) · Applied Physics Letters · doi:10.1063/1.3294625 · Cited by 187 · see citing works

Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications

Li, Y., Long, S., Zhang, M., Liu, Q., Shao, L., Zhang, S., Wang, Y., Zuo, Q., Liu, S., & Liu, M. (2009) · IEEE Electron Device Letters · doi:10.1109/led.2009.2036276 · Cited by 161 · see citing works

Silver incorporation in Ge–Se glasses used in programmable metallization cell devices

Mitkova, M. I., & Kozicki, M. N. (2002) · Journal of Non-Crystalline Solids · doi:10.1016/s0022-3093(01)01068-7 · Cited by 155 · see citing works

Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS process

Gopalan, C., Ma, Y., Gallo, T., Wang, J., Runnion, E. F., Saenz, J., Koushan, F. S., Blanchard, P., & Hollmer, S. (2010) · Solid-State Electronics · doi:10.1016/j.sse.2010.11.024 · Cited by 128 · see citing works

Mass transport in chalcogenide electrolyte films – materials and applications

Kozicki, M. N., & Mitkova, M. I. (2006) · Journal of Non-Crystalline Solids · doi:10.1016/j.jnoncrysol.2005.11.065 · Cited by 126 · see citing works

Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays

Rosezin, R., Linn, E., Nielen, L., Kügeler, C., Bruchhaus, R., & Waser, R. M. (2010) · IEEE Electron Device Letters · doi:10.1109/led.2010.2090127 · Cited by 122 · see citing works

Information storage using nanoscale electrodeposition of metal in solid electrolytes

Kozicki, M. N., Mitkova, M. I., Park, M., Balakrishnan, M., & Gopalan, C. (2003) · Superlattices and Microstructures · doi:10.1016/j.spmi.2004.03.042 · Cited by 116 · see citing works

A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program Control

Dietrich, S., Angerbauer, M., Ivanov, M., Gogl, D., Hoenigschmid, H., Kund, M., Liaw, C., Markert, M., Symanczyk, R., Altimime, L., et al. (2007) · IEEE Journal of Solid-State Circuits · doi:10.1109/jssc.2007.892207 · Cited by 113 · see citing works

Nanoscale memory devices

Chung, A., Deen, M. J., Lee, J., & Meyyappan, M. (2010) · Nanotechnology · doi:10.1088/0957-4484/21/41/412001 · Cited by 111 · see citing works

Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes

Kozicki, M. N., Balakrishnan, M., Gopalan, C., Ratnakumar, C., & Mitkova, M. I. (2006) · Non-Volatile Memory Technology Symposium · doi:10.1109/nvmt.2005.1541405 · Cited by 102 · see citing works

Nonvolatile memory based on solid electrolytes

Kozicki, M. N., Gopalan, C., Balakrishnan, M., Park, M., & Mitkova, M. I. (2005) · IEEE Computational Systems Bioinformatics Conference (CSB) · doi:10.1109/nvmt.2004.1380792 · Cited by 102 · see citing works

Resistive Switching Mechanism in $\hbox{Zn}_{x}\hbox{Cd}_{1 - x}\hbox{S}$ Nonvolatile Memory Devices

Wang, Z., Griffin, P. B., McVittie, J. P., Wong, S. S., McIntyre, P. C., & Nishi, Y. (2007) · IEEE Electron Device Letters · doi:10.1109/led.2006.887640 · Cited by 93 · see citing works

Voltage-Driven On–Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) Memory

Kamalanathan, D., Russo, U., Ielmini, D., & Kozicki, M. N. (2009) · IEEE Electron Device Letters · doi:10.1109/led.2009.2016991 · Cited by 72 · see citing works

Effect of Ion Diffusion on Switching Voltage of Solid-Electrolyte Nanometer Switch

Banno, N., Sakamoto, T., Hasegawa, T., Terabe, K., & Aono, M. (2006) · Japanese Journal of Applied Physics · doi:10.1143/jjap.45.3666 · Cited by 59 · see citing works

One-dimensional model of the programming kinetics of conductive-bridge memory cells

Jameson, J. R., Gilbert, N., Koushan, F. S., Saenz, J., Wang, J., Hollmer, S., & Kozicki, M. N. (2011) · Applied Physics Letters · doi:10.1063/1.3623485 · Cited by 58 · see citing works

Faradaic currents during electroforming of resistively switching Ag–Ge–Se type electrochemical metallization memory cells

Schindler, C., Valov, I., & Waser, R. (2009) · Physical Chemistry Chemical Physics · doi:10.1039/b901026b · Cited by 51 · see citing works

Improvement of CBRAM Resistance Window by Scaling Down Electrode Size in Pure-GeTe Film

Choi, S., Lee, J., Bae, H.-J., Yang, W.-Y., Kim, T., & Kim, K. (2009) · IEEE Electron Device Letters · doi:10.1109/led.2008.2009774 · Cited by 42 · see citing works

Selection of Optimized Materials for CBRAM Based on HT-XRD and Electrical Test Results

Bruchhaus, R., Honal, M., Symanczyk, R., & Kund, M. (2009) · Journal of The Electrochemical Society · doi:10.1149/1.3160570 · Cited by 40 · see citing works

Inherent diode isolation in programmable metallization cell resistive memory elements

Puthentheradam, S. C., Schroder, D. K., & Kozicki, M. N. (2011) · Applied Physics A · doi:10.1007/s00339-011-6292-5 · Cited by 40 · see citing works

Investigation of the Reliability Behavior of Conductive-Bridging Memory Cells

Symanczyk, R., Bruchhaus, R., Dittrich, R., & Kund, M. (2009) · IEEE Electron Device Letters · doi:10.1109/led.2009.2024623 · Cited by 40 · see citing works

Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory

Kim, C., Yoon, S., Choi, K.-J., Ryu, S.-O., Yoon, S., Lee, N.-Y., & Yu, B. (2006) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.2180260 · Cited by 39 · see citing works

Stackable All-Oxide-Based Nonvolatile Memory With $ \hbox{Al}_{2}\hbox{O}_{3}$ Antifuse and $\hbox{p-CuO}_{x}/ \hbox{n-InZnO}_{x}$ Diode

Ahn, S., Kang, B. S., Kim, K. H., Lee, M., Lee, C. B., Болеславович, С. Г., Kim, C. J., & Park, Y. (2009) · IEEE Electron Device Letters · doi:10.1109/led.2009.2016582 · Cited by 38 · see citing works

Non-volatile memory cells based on ZnxCd1−xS ferroelectric Schottky diodes

van der Sluis, P. (2003) · Applied Physics Letters · doi:10.1063/1.1581365 · Cited by 38 · see citing works

Polarity-dependent reversible resistance switching in Ge–Sb–Te phase-change thin films

Pandian, R., Kooi, B. J., Palasantzas, G., Hosson, J. T. M. D., & Pauza, A. (2007) · Applied Physics Letters · doi:10.1063/1.2798242 · Cited by 36 · see citing works

A Nonvolatile Memory With Resistively Switching Methyl-Silsesquioxane

Meier, M., Schindler, C., Gilles, S., Rosezin, R., Ruediger, A. P., Kügeler, C., & Waser, R. M. (2008) · IEEE Electron Device Letters · doi:10.1109/led.2008.2008108 · Cited by 35 · see citing works

Off-state and turn-on characteristics of solid electrolyte switch

Tsuji, Y., Sakamoto, T., Banno, N., Hada, H., & Aono, M. (2010) · Applied Physics Letters · doi:10.1063/1.3285177 · Cited by 33 · see citing works

An Embeddable Multilevel-Cell Solid Electrolyte Memory Array

Gilbert, N., & Kozicki, M. N. (2007) · IEEE Journal of Solid-State Circuits · doi:10.1109/jssc.2007.897172 · Cited by 32 · see citing works

Integration of “Ge Se1−” in crossbar arrays for non-volatile memory applications

Soni, R., Meier, M., Ruediger, A. P., Holländer, B., Kügeler, C., & Waser, R. M. (2009) · Microelectronic Engineering · doi:10.1016/j.mee.2009.01.010 · Cited by 26 · see citing works

Memory switching in SiO films with Ag and Co electrodes

Manhart, S. (1973) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/6/1/312 · Cited by 23 · see citing works

A Low Power Non-Volatile Memory Element Based on Copper in Deposited Silicon Oxide

Balakrishnan, M., Thermadam, S. C. P., Mitkova, M. I., & Kozicki, M. N. (2006) · Non-Volatile Memory Technology Symposium · doi:10.1109/nvmt.2006.378887 · Cited by 20 · see citing works

Equivalent Circuit Modeling of the Ag | As0.24 S 0.36Ag0.40 | Ag System Prepared by Photodissolution of Ag

West, W. C., Sieradzki, K., Kardynal, B. E., & Kozicki, M. N. (1998) · Journal of The Electrochemical Society · doi:10.1149/1.1838749 · Cited by 17 · see citing works

Germanium sulfide-based solid electrolytes for non-volatile memory

Balakrishnan, M., Kozicki, M. N., Gopalan, C., & Mitkova, M. I. (2005) · Conference digest · doi:10.1109/drc.2005.1553049 · Cited by 15 · see citing works

Analogue memory effects in metal/a-Si:H/Metal memory devices

Snell, A. J., LeComber, P. G., Hajtó, J., Rose, M. J., Owen, A. E., & Osborne, I. S. (1991) · Journal of Non-Crystalline Solids · doi:10.1016/s0022-3093(05)80352-7 · Cited by 9 · see citing works

Memristive devices for computing

Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885 · see citing works

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

Pan, F., Gao, S., Chen, C., Song, C., & Zeng, F. (2014) · Materials Science and Engineering R Reports · doi:10.1016/j.mser.2014.06.002 · Cited by 1,399 · see citing works

The Future of Memristors: Materials Engineering and Neural Networks

Sun, K., Chen, J., & Yan, X. (2020) · Advanced Functional Materials · doi:10.1002/adfm.202006773 · Cited by 486 · see citing works

Resistive switching phenomena: A review of statistical physics approaches

Lee, J. S., Lee, S., & Noh, T. W. (2015) · Applied Physics Reviews · doi:10.1063/1.4929512 · Cited by 462 · see citing works

Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories

Chen, J.-Y., Hsin, C., Huang, C., Chiu, C., Huang, Y.-T., Lin, S.-J., Wu, W., & Chen, L. (2013) · Nano Letters · doi:10.1021/nl4015638 · Cited by 388 · see citing works

Stochastic memristive devices for computing and neuromorphic applications

Gaba, S., Sheridan, P., Zhou, J., Choi, S., & Lu, W. (2013) · Nanoscale · doi:10.1039/c3nr01176c · Cited by 307 · see citing works

Challenges and Applications of Emerging Nonvolatile Memory Devices

Banerjee, W. (2020) · Electronics · doi:10.3390/electronics9061029 · Cited by 275 · see citing works

Nanoscale resistive switching devices: mechanisms and modeling

Yang, Y., & Lu, W. D. (2013) · Nanoscale · doi:10.1039/c3nr03472k · Cited by 269 · see citing works

Challenges in materials and devices for resistive-switching-based neuromorphic computing

del Valle, J., Ramírez, J. G., Rozenberg, M. J., & Schuller, I. K. (2018) · Journal of Applied Physics · doi:10.1063/1.5047800 · Cited by 256 · see citing works

Nonvolatile Memory Materials for Neuromorphic Intelligent Machines

Jeong, D. S., & Hwang, C. S. (2018) · Advanced Materials · doi:10.1002/adma.201704729 · Cited by 244 · see citing works

State of the art of metal oxide memristor devices

Mohammad, B. S., Jaoudé, M. A., Kumar, V., Homouz, D., Abunahla, H., Al‐Qutayri, M., & Christoforou, N. (2015) · Nanotechnology Reviews · doi:10.1515/ntrev-2015-0029 · Cited by 230 · see citing works

Nanoionics‐Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications

Wang, Z., Wang, L., Nagai, M., Xie, L., Yi, M., & Huang, W. (2017) · Advanced Electronic Materials · doi:10.1002/aelm.201600510 · Cited by 221 · see citing works

From Ferroelectric Material Optimization to Neuromorphic Devices

Mikolajick, T., Park, M. H., Bégon‐Lours, L., & Slesazeck, S. (2022) · Advanced Materials · doi:10.1002/adma.202206042 · Cited by 218 · see citing works

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two‐Dimensional Layered Materials

Li, Y., Long, S., Liu, Q., Lv, H., & Liu, M. (2017) · Small · doi:10.1002/smll.201604306 · Cited by 213 · see citing works

Resistive Switching Memory Based on Bioinspired Natural Solid Polymer Electrolytes

Raeis‐Hosseini, N., & Lee, J. (2014) · ACS Nano · doi:10.1021/nn5055909 · Cited by 207 · see citing works

Towards artificial neurons and synapses: a materials point of view

Jeong, D. S., Kim, I., Ziegler, M., & Kohlstedt, H. (2012) · RSC Advances · doi:10.1039/c2ra22507g · Cited by 190 · see citing works

Oxide Heterostructure Resistive Memory

Yang, Y., Choi, S., & Lu, W. D. (2013) · Nano Letters · doi:10.1021/nl401287w · Cited by 185 · see citing works

High-Performance Mixed-Signal Neurocomputing With Nanoscale Floating-Gate Memory Cell Arrays

Merrikh-Bayat, F., Guo, X., Klachko, M., Prezioso, M., Likharev, K. K., & Strukov, D. B. (2018) · IEEE Transactions on Neural Networks and Learning Systems · doi:10.1109/tnnls.2017.2778940 · Cited by 167 · see citing works

Controlling the Resistive Switching Behavior in Starch-Based Flexible Biomemristors

Raeis‐Hosseini, N., & Lee, J. (2016) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.6b01559 · Cited by 159 · see citing works

Nanoscale electrochemistry using dielectric thin films as solid electrolytes

Valov, I., & Lu, W. D. (2016) · Nanoscale · doi:10.1039/c6nr01383j · Cited by 145 · see citing works

Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors

Yi, W., Savel'ev, S. E., Medeiros-Ribeiro, G., Miao, F., Zhang, M.-X., Yang, J. J., Bratkovsky, A. M., & Williams, R. S. (2016) · Nature Communications · doi:10.1038/ncomms11142 · Cited by 141 · see citing works

Memristor‐Based Intelligent Human‐Like Neural Computing

Wang, S., Song, L., Chen, W., Wang, G., Hao, E., Li, C., Hu, Y., Pan, Y., Nathan, A., Hu, G., et al. (2022) · Advanced Electronic Materials · doi:10.1002/aelm.202200877 · Cited by 121 · see citing works

Down-Scalable and Ultra-fast Memristors with Ultra-high Density Three-Dimensional Arrays of Perovskite Quantum Wires

Poddar, S., Zhang, Y., Gu, L., Zhang, D., Zhang, Q., Yan, S., Kam, M., Zhang, S., Song, Z., Hu, W., et al. (2021) · Nano Letters · doi:10.1021/acs.nanolett.1c00834 · Cited by 116 · see citing works

Conductance Quantization in Resistive Random Access Memory

Li, Y., Long, S., Liu, Y., Hu, C., Teng, J., Liu, Q., Lv, H., Suñé, J., & Liu, M. (2015) · Nanoscale Research Letters · doi:10.1186/s11671-015-1118-6 · Cited by 112 · see citing works

Direct observation of lithium-ion transport under an electrical field in LixCoO2 nanograins

Zhu, X., Ong, C. S., Xu, X., Hu, B., Shang, J., Yang, H., Katlakunta, S., Liu, Y., Chen, X., Pan, L., et al. (2013) · Scientific Reports · doi:10.1038/srep01084 · Cited by 109 · see citing works

Conductance quantization in a Ag filament-based polymer resistive memory

Gao, S., Zeng, F., Chen, C., Tang, G., Lin, Y., Zheng, Z., Song, C., & Pan, F. (2013) · Nanotechnology · doi:10.1088/0957-4484/24/33/335201 · Cited by 102 · see citing works

Bipolar Electrochemical Mechanism for Mass Transfer in Nanoionic Resistive Memories

Tian, X., Yang, S., Zeng, M., Wang, L., Wei, J., Xu, Z. Q., Wang, W., & Bai, X. (2014) · Advanced Materials · doi:10.1002/adma.201400127 · Cited by 98 · see citing works

Synaptic electronics and neuromorphic computing

Upadhyay, N. K., Joshi, S., & Yang, J. J. (2016) · Science China Information Sciences · doi:10.1007/s11432-016-5565-1 · Cited by 97 · see citing works

Resistive switching in HfO 2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach

Aldana, S., García‐Fernández, P., Romero‐Zaliz, R., González, M. B., Jiménez-Molinos, F., Gómez‐Campos, F. M., Campabadal, F., & Roldán, J. B. (2020) · Journal of Physics D Applied Physics · doi:10.1088/1361-6463/ab7bb6 · Cited by 85 · see citing works

A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO 2 /Si-n + -based RRAMs

Aldana, S., García‐Fernández, P., Rodriguez-Fernandez, A., Romero‐Zaliz, R., González, M. B., Jiménez-Molinos, F., Campabadal, F., Gómez‐Campos, F. M., & Roldán, J. B. (2017) · Journal of Physics D Applied Physics · doi:10.1088/1361-6463/aa7939 · Cited by 58 · see citing works

Nonvolatile bipolar resistive switching in amorphous Sr-doped LaMnO3 thin films deposited by radio frequency magnetron sputtering

Liu, D., Wang, N., Wang, G., Shao, Z., Zhu, X., Zhang, C., & Cheng, H. (2013) · Applied Physics Letters · doi:10.1063/1.4800229 · Cited by 57 · see citing works

Optical memristive switches

Koch, U., Hoessbacher, C. B., Emboras, A., & Leuthold, J. (2017) · Journal of Electroceramics · doi:10.1007/s10832-017-0072-3 · Cited by 55 · see citing works

Modeling and implementation of firing-rate neuromorphic-network classifiers with bilayer Pt/Al2O3/TiO2−x/Pt Memristors

Prezioso, M., Kataeva, I., Merrikh‐Bayat, F., Hoskins, B. D., Adam, G. C., Sota, T., Likharev, K. K., & Strukov, D. B. (2015) · Technical digest - International Electron Devices Meeting/Technical digest · doi:10.1109/iedm.2015.7409719 · Cited by 51 · see citing works

Recent progress in physically transient resistive switching memory

Hu, W. H., Yang, B., Zhang, Y., & She, Y. (2020) · Journal of Materials Chemistry C · doi:10.1039/d0tc03668d · Cited by 52 · see citing works

Relaxation oscillator-realized artificial electronic neurons, their responses, and noise

Lim, H., Ahn, H.-W., Kornijčuk, V., Kim, G., Seok, J. Y., Kim, I., Hwang, C. S., & Jeong, D. S. (2016) · Nanoscale · doi:10.1039/c6nr01278g · Cited by 46 · see citing works

Joint contributions of Ag ions and oxygen vacancies to conducting filament evolution of Ag/TaOx/Pt memory device

Chung, Y.-L., Cheng, W.-H. S., Jeng, J.-S., Chen, W.-C., Jhan, S.-A., & Chen, J. (2014) · Journal of Applied Physics · doi:10.1063/1.4899319 · Cited by 45 · see citing works

Nonvolatile Memory Device Based on Bipolar and Unipolar Resistive Switching in Bio‐Organic Aloe Polysaccharides Thin Film

Lim, Z. X., & Cheong, K. Y. (2018) · Advanced Materials Technologies · doi:10.1002/admt.201800007 · Cited by 40 · see citing works

Electrode-material dependent switching in TaOxmemristors

Ge, N., Zhang, M.-X., Zhang, L., Yang, J. J., Li, Z., & Williams, R. S. (2014) · Semiconductor Science and Technology · doi:10.1088/0268-1242/29/10/104003 · Cited by 38 · see citing works

Filament growth dynamics in solid electrolyte-based resistive memories revealed by in situ TEM

Tian, X., Wang, L., Wei, J., Yang, S., Wang, W., Xu, Z. Q., & Bai, X. (2014) · Nano Research · doi:10.1007/s12274-014-0469-0 · Cited by 33 · see citing works

Recent Developments in Oxide-Based Ionic Conductors: Bulk Materials, Nanoionics, and Their Memory Applications

Wan, T., Zhang, L., Du, H., Lin, X., Qu, B., Xu, H., Li, S., & Chu, D. (2016) · Critical reviews in solid state and materials sciences/CRC critical reviews in solid state and materials sciences · doi:10.1080/10408436.2016.1244657 · Cited by 30 · see citing works

Stochastic memristive nature in Co-doped CeO2 nanorod arrays

Younis, A., Chu, D., & Li, S. (2013) · Applied Physics Letters · doi:10.1063/1.4851935 · Cited by 30 · see citing works

Structure, electronic, and vibrational properties of amorphous AsS 2 and Ag AsS 2 : Experimentally constrained density functional study

Akola, J., Jóvári, P., Kaban, I. G., Voleská, I., Kolář, J., Wagner, T., & Jones, R. (2014) · Physical Review B · doi:10.1103/physrevb.89.064202 · Cited by 26 · see citing works

Resistive switching controlled by the hydration level in thin films of the biopigment eumelanin

Mauro, E. D., Carpentier, O., Sánchez, S. I. Y., Ignoumba, N. I., Myriam, L.-J., Lefebvre, J., Zhang, S., Graeff, C. F. O., Cicoira, F., & Santato, C. (2016) · Journal of Materials Chemistry C · doi:10.1039/c6tc02793h · Cited by 25 · see citing works

Future Microsystems for Information Processing: Limits and Lessons From the Living Systems

Zhirnov, V. V., & Cavin, R. K. (2013) · IEEE Journal of the Electron Devices Society · doi:10.1109/jeds.2013.2258631 · Cited by 22 · see citing works

Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

Roldán, J. B., Miranda, E. A., González-Cordero, G., García‐Fernández, P., Romero‐Zaliz, R., González, P., Aguilera, A. M., González, M. B., & Jiménez-Molinos, F. (2018) · Journal of Applied Physics · doi:10.1063/1.5006995 · Cited by 23 · see citing works

Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells

Nishi, Y., Sasakura, H., & Kimoto, T. (2017) · Journal of materials research/Pratt's guide to venture capital sources · doi:10.1557/jmr.2017.254 · Cited by 20 · see citing works

Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold-Voltage HfO2-Based Artificial Neurons

Dou, H., Lin, Z., Hu, Z., Tsai, B. K., Zheng, D., Song, J., Lu, J., Zhang, X., Jia, Q. X., MacManus‐Driscoll, J. L., et al. (2023) · Nano Letters · doi:10.1021/acs.nanolett.3c02217 · Cited by 19 · see citing works

Multiprotocol-induced plasticity in artificial synapses

Kornijčuk, V., Kavehei, O., Lim, H., Seok, J. Y., Kim, S. K., Kim, I., Lee, W.-S., Choi, B. J., & Jeong, D. S. (2014) · Nanoscale · doi:10.1039/c4nr03405h · Cited by 19 · see citing works

Tunable resistance switching in solution processed chromium-doped strontium titanate nanoparticles films

Wan, T., Qu, B., Du, H., Lin, X., Guan, P., Lin, Q., Chen, N., Tan, T. T., Hang, T., & Chu, D. (2017) · Journal of Colloid and Interface Science · doi:10.1016/j.jcis.2017.01.095 · Cited by 19 · see citing works

Control of metal/oxide electron barriers in CBRAM cells by low work-function liners

Stefano, F. D., Afanas'ev, V. V., Houssa, M., Stesmans, A. L., Opsomer, K., Jurczak, M., & Goux, L. (2013) · Microelectronic Engineering · doi:10.1016/j.mee.2013.03.088 · Cited by 19 · see citing works

Ultra‐Low Voltage and Ultra‐Low Power Consumption Nonvolatile Operation of a Three‐Terminal Atomic Switch

Wang, Q., Itoh, Y., Tsuruoka, T., Aono, M., & Hasegawa, T. (2015) · Advanced Materials · doi:10.1002/adma.201502678 · Cited by 18 · see citing works

Magnetoresistance of conductive filament in Ni/HfO 2 /Pt resistive switching memory

Otsuka, S., Hamada, Y., Ito, D., Shimizu, T., & Shingubara, S. (2015) · Japanese Journal of Applied Physics · doi:10.7567/jjap.54.05ed02 · Cited by 18 · see citing works

Solid state ionics for the development of artificial intelligence components

Terabe, K., Tsuchiya, T., & Tsuruoka, T. (2022) · Japanese Journal of Applied Physics · doi:10.35848/1347-4065/ac64e5 · Cited by 16 · see citing works

Recent development of studies on the mechanism of resistive memories in several metal oxides

Tian, X., Wang, L., Li, X., Wei, J., Yang, S., Xu, Z., Wang, W., & Bai, X. (2013) · Science China Physics Mechanics and Astronomy · doi:10.1007/s11433-013-5341-9 · Cited by 16 · see citing works

Crystalline and Amorphous Chalcogenides, High-Tech Materials with Structural Disorder and Many Important Applications

Frumar, M., Wagner, T., Shimakawa, K., & Frumarová, B. (2015) · NATO science for peace and security series. C, Environmental security · doi:10.1007/978-94-017-9921-8_7 · Cited by 16 · see citing works

An electronic implementation of amoeba anticipation

Ziegler, M., Ochs, K., Hansen, M., & Kohlstedt, H. (2013) · Applied Physics A · doi:10.1007/s00339-013-7615-5 · Cited by 16 · see citing works

Biodegradable natural chitosan coating films-based flexible resistive switching memory for transient electronics

He, N., Sun, Y., Yuan, Q., Wang, Y., & Zuo, S. (2023) · Materials Science and Engineering B · doi:10.1016/j.mseb.2023.116578 · Cited by 15 · see citing works

Conduction mechanism and synaptic behaviour of interfacial switching AlO σ -based RRAM

Cho, S., Jung, J., Kim, S., & Pak, J. J. (2020) · Semiconductor Science and Technology · doi:10.1088/1361-6641/ab8d0e · Cited by 15 · see citing works

X-ray absorption spectroscopy of Cu-doped WO3 films for use in electrochemical metallization cell memory

Kuzmin, A., Anspoks, A., Kalinko, A., Timoshenko, J., & Kalendarev, R. (2014) · Journal of Non-Crystalline Solids · doi:10.1016/j.jnoncrysol.2014.01.022 · Cited by 15 · see citing works

Memristor Device Overview

Abunahla, H., & Mohammad, B. S. (2017) · Analog circuits and signal processing/Analog circuits and signal processing series · doi:10.1007/978-3-319-65699-1_1 · Cited by 15 · see citing works

Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta2O5−x/Pt, Pt structure

Wang, Q., Itoh, Y., Hasegawa, T., Tsuruoka, T., Yamaguchi, S., Watanabe, S., Hiramoto, T., & Aono, M. (2013) · Applied Physics Letters · doi:10.1063/1.4811122 · Cited by 13 · see citing works

Inkjet assisted fabrication of planar biocompatible memristors

Illarionov, G. A., Kolchanov, D. S., Kuchur, O. A., Жуков, М. В., Sergeeva, E., Krishtop, V. V., Vinogradov, A. V., & Morozov, M. I. (2019) · RSC Advances · doi:10.1039/c9ra08114c · Cited by 13 · see citing works

Electroforming Processes in Metal Oxide Resistive‐Switching Cells

Jeong, D. S., Choi, B. J., & Hwang, C. S. (2016) · doi:10.1002/9783527680870.ch10 · Cited by 13 · see citing works

Significant Effects of Electrode Metal Work Function on Resistive Memory Devices with Gelatin Biodielectric Layer

Liu, S., Dong, S., Jin, H., Huang, S., Wang, X., & Luo, J. (2018) · Journal of The Electrochemical Society · doi:10.1149/2.0701807jes · Cited by 12 · see citing works

Solution processed laterally grown Zinc Oxide microstructures for next generation computing devices

Younis, A. (2020) · Physica E Low-dimensional Systems and Nanostructures · doi:10.1016/j.physe.2020.114475 · Cited by 12 · see citing works

Study of the sorption properties of Ge20Se80 thin films for NO2 gas sensing

Chen, P., Mitkova, M. I., Tenne, D. A., Wolf, K., Georgieva, V., & Vergov, L. G. (2012) · Thin Solid Films · doi:10.1016/j.tsf.2012.09.077 · Cited by 11 · see citing works

Observation of indium ion migration-induced resistive switching in Al/Mg0.5Ca0.5TiO3/ITO

Lin, Z.-H., & Wang, Y. (2016) · Applied Physics Letters · doi:10.1063/1.4960525 · Cited by 11 · see citing works

Investigation of Barrier Layer Effect on Switching Uniformity and Synaptic Plasticity of AlN Based Conductive Bridge Random Access Memory

Mohanty, S. K., Reddy, K. P. K., Wu, C., Lee, P.-T., Chang, K., Busa, P., & Kuthati, Y. (2022) · Electronics · doi:10.3390/electronics11213432 · Cited by 10 · see citing works

Electron barrier height at CuxTe1−x/Al2O3 interfaces of conducting bridge memory stacks

Afanas'ev, V. V., Stefano, F. D., Houssa, M., Stesmans, A. L., Goux, L., Opsomer, K., Detavernier, C., Kittl, J. A., & Jurczak, M. (2012) · Thin Solid Films · doi:10.1016/j.tsf.2012.10.106 · Cited by 10 · see citing works

Nonvolatile Electrochemical Metallization Memory Based on Nanocrystalline La2O3 Solid Electrolyte Thin Film

Zhao, H., Tu, H., Wei, F., Xiong, Y., & Du, J. (2015) · IEEE Journal of the Electron Devices Society · doi:10.1109/jeds.2015.2412937 · Cited by 10 · see citing works

Bipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytes

Soni, R., Meuffels, P., Petraru, A., Hansen, M., Ziegler, M., Vavra, O., Kohlstedt, H., & Jeong, D. S. (2013) · Nanoscale · doi:10.1039/c3nr03993e · Cited by 10 · see citing works

Superior resistive switching performance in SnO2 nanoparticles embedded TiO2 nanorods-based thin films

Alresheedi, F. I. (2023) · Ceramics International · doi:10.1016/j.ceramint.2023.03.110 · Cited by 9 · see citing works

Dynamic moderation of an electric field using a SiO2 switching layer in TaOx ‐based ReRAM

Wang, Q., Itoh, Y., Tsuruoka, T., Ohtsuka, S., Shimizu, T., Shingubara, S., Hasegawa, T., & Aono, M. (2015) · physica status solidi (RRL) - Rapid Research Letters · doi:10.1002/pssr.201409531 · Cited by 9 · see citing works

Ion transport-related resistive switching in film sandwich structures

Zhu, X., Shang, J., Liu, G., & Li, R. (2014) · Chinese Science Bulletin · doi:10.1007/s11434-014-0284-8 · Cited by 9 · see citing works

Resistive switching characteristics of PECVD‐deposited porous SiO 2 ‐based electrochemical metallisation memory cells

Zhou, J. (2016) · Electronics Letters · doi:10.1049/el.2015.4058 · Cited by 9 · see citing works

Unipolar resistive switching behavior in sol–gel synthesized FeSrTiO 3 thin films

Thakre, A., Kaswan, J., Shukla, A. K., & Kumar, A. (2017) · RSC Advances · doi:10.1039/c7ra09836g · Cited by 9 · see citing works

Physics-Technological Fabrication of Memresistors for Micro- and Nanoelectronics

Belov, A. N., Perevalov, A. A., & Shevyakov, V. I. (2017) · Proceedings of Universities ELECTRONICS · doi:10.24151/1561-5405-2017-22-4-305-321 · Cited by 9 · see citing works

Fabrication of solution-processed SnO2–Based flexible ReRAM using laser-induced graphene transferred onto PDMS

Jung, J., Shin, D., Lee, Y., & Pak, J. J. (2021) · Current Applied Physics · doi:10.1016/j.cap.2021.02.009 · Cited by 9 · see citing works

Optimal migration path of Ag in HfO 2 : A first-principles study

Dai, Y., Chen, Z., Jin, B., Li, N., & Li, X.-F. (2015) · Chinese Physics B · doi:10.1088/1674-1056/24/7/073101 · Cited by 9 · see citing works

Design of a two-layer structure to significantly improve the performance of zinc oxide resistive memory

Yan, X., Wang, X., Wang, D., Li, M., Guan, L., Yao, J., Niu, X., Xing, B., Yu, Y., Tan, M., et al. (2019) · Nanotechnology · doi:10.1088/1361-6528/ab597b · Cited by 7 · see citing works

Geometric Design of Confined Conducting Filaments in Resistive Random Access Memory by Al2O3 Nanodome-Shaped Arrays (NDSAs) via Glancing-Angle Deposition Technology Toward Neuromorphic Computing

Shen, Y., Shih, Y., Wang, Y., Wang, K., Yang, T., Cyu, R., Yu, Y., & Chueh, Y. (2021) · ACS Materials Letters · doi:10.1021/acsmaterialslett.1c00513 · Cited by 6 · see citing works

Water-soluble polyethylene-oxide polymer based memristive devices

Mahato, P., Puyoo, E., Pruvost, S., & Deleruyelle, D. (2022) · Microelectronic Engineering · doi:10.1016/j.mee.2022.111806 · Cited by 6 · see citing works

Silver environment and covalent network rearrangement in GeS3–Ag glasses

Rátkai, L., Kaban, I., Wágner, T., Kolář, J., Valková, S., Voleská, I., Beuneu, B., & Jóvári, P. (2013) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/25/45/454210 · Cited by 6 · see citing works

Mapping of image and network processing tasks on high-throughput CMOL FPGA circuits

Madhavan, A., & Strukov, D. B. (2012) · IEEE/IFIP International Conference on VLSI and System-on-Chip (VLSI-SoC) · doi:10.1109/vlsi-soc.2012.6379010 · Cited by 6 · see citing works

Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours

Lim, H., Soni, R., Kim, D., Kim, G., Kornijčuk, V., Kim, I., Park, J., Hwang, C. S., & Jeong, D. S. (2016) · Nanoscale · doi:10.1039/c6nr04072a · Cited by 6 · see citing works

New materials for memristive switching

Choi, B. J., Ge, N., Yang, J. J., Zhang, M.-X., Williams, R. S., Norris, K. J., & Kobayashi, N. P. (2014) · IEEE International Symposium on Circuits and Systems proceedings · doi:10.1109/iscas.2014.6865757 · Cited by 5 · see citing works

Defect-mediated resistive switching in thin multilayer hexagonal boron nitride: A first principles study of charge state modulation

Afshar, M. K., & Nadimi, E. (2025) · Materials Today Physics · doi:10.1016/j.mtphys.2025.101673 · Cited by 4 · see citing works

Potential-Dependent Restructuring and Chemical Noise at Au–Ag–Au Atomic Scale Junctions

Hwang, T.-W., & Bohn, P. W. (2014) · ACS Nano · doi:10.1021/nn406098u · Cited by 4 · see citing works

Synaptic devices based on HfO2 memristors

González, M. B., Maestro-Izquierdo, M., Poblador, S., Zabala, M., Campabadal, F., González-Cordero, G., Aldana, S., Maldonado, D., Jiménez-Molinos, F., & Roldán, J. B. (2021) · Elsevier eBooks · doi:10.1016/b978-0-12-821184-7.00028-1 · Cited by 4 · see citing works

Rational Design on Controllable Cation Injection with Improved Conductive-Bridge Random Access Memory by Glancing Angle Deposition Technology toward Neuromorphic Application.

Shih, Y.-C., Shen, Y.-C., Cheng, Y.-K., Chaudhary, M., Yang, T.-Y., Yu, Y., & Chueh, Y. (2021) · ACS Applied Materials and Interfaces · doi:10.1021/acsami.1c18101 · Cited by 4 · see citing works

Reconfigurable nanoionic and photoionic material and device platforms

Elfarash, A. H., & Gholipour, B. (2024) · Advances in Physics X · doi:10.1080/23746149.2024.2338285 · Cited by 3 · see citing works

Self-assembled tin dioxide for forming-free resistive random-access memory application

Hong, Y., Wang, T.-H., Wei, S., Chang, P., & Yew, T. (2016) · Japanese Journal of Applied Physics · doi:10.7567/jjap.55.060301 · Cited by 3 · see citing works

HfOx-Based Conductive Bridge Random Access Memory with Al2O3 Sandglass Nanostructures via Glancing Angle Deposition Technology toward Neuromorphic Applications

Shen, Y., Huang, Y., Yang, T., Yu, Y., Kuo, H., Tseng, T., & Chueh, Y. (2023) · ACS Applied Nano Materials · doi:10.1021/acsanm.3c00810 · Cited by 3 · see citing works

CBRAM devices with a water casted solid polymer electrolyte for flexible electronic applications

Mahato, P., Puyoo, E., Deleruyelle, D., & Pruvost, S. (2019) · IEEE Nanotechnology Materials and Devices Conference (NMDC) · doi:10.1109/nmdc47361.2019.9083996 · Cited by 3 · see citing works

Radial Growth Model for Conical Nanobridge in Resistive Switching Memory Devices

Liu, T., Kang, Y.-H., El-Helw, S., Potnis, T., & Orlowski, M. (2013) · MRS Proceedings · doi:10.1557/opl.2013.552 · Cited by 2 · see citing works

Improvement of appearance probability of conductance quantization by hydrogen thermal treatment in Pt/NiO/Pt-resistive switching cells

Nishi, Y. (2021) · MRS Advances · doi:10.1557/s43580-021-00127-9 · Cited by 2 · see citing works

Mixed Signal Neurocomputing Based on Floating-gate Memories

Guo, X. (2017) · eScholarship (California Digital Library) · Cited by 2 · see citing works

Two‐Terminal Neuromorphic Memristors

He, H., Huang, H., & Yang, R. (2021) · Wiley eBooks · doi:10.1002/9783527835317.ch1 · Cited by 2 · see citing works

A halide perovskite/Nb:SrTiO 3 heterojunction-based interfacial-type memristor

Kang, K., Hao, J., Niu, W., Tian, S., Liu, B., Dong, C., Yang, C., Chen, X., Tang, X., Yang, R., et al. (2025) · Journal of Materials Chemistry C · doi:10.1039/d5tc02744f · Cited by 1 · see citing works

Fabrication of silicon highly-rich SiOx(x<0.75) and its novel resistive switching behaviors

Wang, Y., Qian, X., Chen, K., Fang, Z.-H., Li, W., & Xu, J. (2012) · IEEE International Conference on Solid-State and Integrated Circuit Technology · doi:10.1109/icsict.2012.6467606 · Cited by 1 · see citing works

Electrochemical metallization memories—fundamentals, applications, prospects

Valov, I., Waser, R. M., Jameson, J. R., & Kozicki, M. N. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/28/289502 · Cited by 312 · see citing works

Conductive filament localization in nano-scale electrochemical metallization cells

Speckbacher, M. (2019) · mediaTUM – the media and publications repository of the Technical University Munich (Technical University Munich)

DNA Metallization for Nanoelectronics

Han, G., & Lee, J. K. (2018) · Applied Chemistry for Engineering · doi:10.14478/ace.2018.1049

Conductive filament distribution in nano-scale electrochemical metallization cells.

Speckbacher, M., Rinderle, M., Bienek, O., Sharp, I. D., Gagliardi, A., & Tornow, M. (2024) · Nanoscale · doi:10.1039/d4nr02870h · Cited by 4 · see citing works

Transport and distribution of mass and charge in nano-scaled electrochemical metallization memory cells

Valov, I., Tappertzhofen, S., Lentz, F., & Waser, R. (2011) · JuSER (Forschungszentrum Jülich)