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The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus

Open access
Fei, Ruixiang, Yang, Li·2014·Nano Letters

Abstract

Newly fabricated few-layer black phosphorus and its monolayer structure, phosphorene, are expected to be promising for electronic and optical applications because of their finite direct band gaps and sizable but anisotropic electronic mobility. By first-principles simulations, we show that this unique anisotropic free-carrier mobility can be controlled by using simple strain conditions. With the appropriate biaxial or uniaxial strain (4-6%), we can rotate the preferred conducting direction by 90°. This will be useful for exploring unusual quantum Hall effects and exotic electronic and mechanical applications based on phosphorene.

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Metadata

Authors
Fei, R., & Yang, L.
Venue
Nano Letters
Published
2014-05-02
Volume
14
Issue
5
Pages
2884-2889
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W1671934191
Cited by
1,282
References
2
FWCI
78.18
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus. https://app.cochat.ai/papers/10.1021/nl500935z
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Fei, R., & Yang, L. (2014). Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus. Nano Letters. https://doi.org/10.1021/nl500935z

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.