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Investigation of Band-Offsets at Monolayer–Multilayer MoS2 Junctions by Scanning Photocurrent Microscopy
Open accessAbstract
The thickness-dependent band structure of MoS2 implies that discontinuities in energy bands exist at the interface of monolayer (1L) and multilayer (ML) thin films. The characteristics of such heterojunctions are analyzed here using current versus voltage measurements, scanning photocurrent microscopy, and finite element simulations of charge carrier transport. Rectifying I-V curves are consistently observed between contacts on opposite sides of 1L/ML junctions, and a strong bias-dependent photocurrent is observed at the junction. Finite element device simulations with varying carrier concentrations and electron affinities show that a type II band alignment at single layer/multilayer junctions reproduces both the rectifying electrical characteristics and the photocurrent response under bias. However, the zero-bias junction photocurrent and its energy dependence are not explained by conventional photovoltaic and photothermoelectric mechanisms, indicating the contributions of hot carriers.
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Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
Roy, K., Padmanabhan, M., Goswami, S., Sai, T. P., Ramalingam, G., Raghavan, S., & Ghosh, A. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.206 · Cited by 1,436
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Recent Advances in Two-Dimensional Materials beyond Graphene
Bhimanapati, G. R., Lin, Z., Meunier, V., Jung, Y., Cha, J., Das, S., Xiao, D., Son, Y., Strano, M. S., Cooper, V. R., et al. (2015) · ACS Nano · doi:10.1021/acsnano.5b05556 · Cited by 2,659
Li, C., Cao, Q., Wang, F., Xiao, Y., Li, Y., Delaunay, J.-J., & Zhu, H. (2018) · Chemical Society Reviews · doi:10.1039/c8cs00067k · Cited by 494
Chuang, H.-J., Chamlagain, B., Koehler, M., Perera, M. M., Yan, J., Mandrus, D., Tománek, D., & Zhou, Z. (2016) · Nano Letters · doi:10.1021/acs.nanolett.5b05066 · Cited by 426
Atomically thin p–n junctions based on two-dimensional materials
Frisenda, R., Molina-Mendoza, A. J., Mueller, T., Castellanos-Gomez, A., & van der Zant, H. S. J. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00880e · Cited by 312
Room-temperature valleytronic transistor
Li, L., Shao, L., Liu, X., Gao, A., Wang, H., Zheng, B., Hou, G., Shehzad, K., Yu, L., Miao, F., et al. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0727-0 · Cited by 161
Metadata
- Authors
- Howell, S. L., Jariwala, D., Wu, C.-C., Chen, K.-S., Sangwan, V. K., Kang, J., Marks, T. J., Hersam, M. C., & Lauhon, L. J.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-03-30
- Volume
- 15
- Issue
- 4
- Pages
- 2278-2284
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W1994066597
- Cited by
- 163
- References
- 1
- FWCI
- 9.46
- Type
- journal article
- Language
- en
- Open access
- green
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