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Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2
Abstract
Growth of a uniform oxide film with a tunable thickness on two-dimensional transition metal dichalcogenides is of great importance for electronic and optoelectronic applications. Here we demonstrate homogeneous surface oxidation of atomically thin WSe2 with a self-limiting thickness from single- to trilayers. Exposure to ozone (O3) below 100 °C leads to the lateral growth of tungsten oxide selectively along selenium zigzag-edge orientations on WSe2. With further O3 exposure, the oxide regions coalesce and oxidation terminates leaving a uniform thickness oxide film on top of unoxidized WSe2. At higher temperatures, oxidation evolves in the layer-by-layer regime up to trilayers. The oxide films formed on WSe2 are nearly atomically flat. Using photoluminescence and Raman spectroscopy, we find that the underlying single-layer WSe2 is decoupled from the top oxide but hole-doped. Our findings offer a new strategy for creating atomically thin heterostructures of semiconductors and insulating oxides with potential for applications in electronic devices.
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Citations
Cites
Generalized Gradient Approximation Made Simple
Perdew, J. P., Burke, K., & Ernzerhof, M. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.3865 · Cited by 215,824
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939
The SIESTA method for ab initio order-N materials simulation
Soler, J. M., Artacho, E., Gale, J. D., García, A., Junquera, J., Ordejón, P., & Sánchez-Portal, D. (2002) · Journal of Physics: Condensed Matter · doi:10.1088/0953-8984/14/11/302 · Cited by 12,218
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Ultrasensitive photodetectors based on monolayer MoS2
Lopez-Sanchez, O., Lembke, D., Kayci, M., Radenovic, A., & Kis, A. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.100 · Cited by 5,043
Wilson, J. A., & Yoffe, A. D. (1969) · Advances in Physics · doi:10.1080/00018736900101307 · Cited by 4,090
Single-Layer MoS2Phototransistors
Yin, Z., Li, H., Li, H., Jiang, L., Shi, Y., Sun, Y., Lu, G., Zhang, Q., Chen, X., & Zhang, H. (2012) · ACS Nano · doi:10.1021/nn2024557 · Cited by 3,493
General Relationship for the Thermal Oxidation of Silicon
Deal, B. E., & Grove, A. S. (1965) · Journal of Applied Physics · doi:10.1063/1.1713945 · Cited by 3,470
Tightly bound trions in monolayer MoS2
Mak, K. F., He, K., Lee, C., Lee, G. H., Hone, J., Heinz, T. F., & Shan, J. (2013) · Nature Materials · doi:10.1038/nmat3505 · Cited by 2,865
Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
Zhao, W., Ghorannevis, Z., Chu, L., Toh, M., Kloc, C., Tan, P.-H., & Eda, G. (2013) · ACS Nano · doi:10.1021/nn305275h · Cited by 2,122
Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
Castellanos-Gomez, A., Buscema, M., Molenaar, R., Singh, V., Janssen, L., van der Zant, H. S. J., & Steele, G. A. (2014) · 2D Materials · doi:10.1088/2053-1583/1/1/011002 · Cited by 1,970
High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
Fang, H., Chuang, S., Chang, T. C., Takei, K., Takahashi, T., & Javey, A. (2012) · Nano Letters · doi:10.1021/nl301702r · Cited by 1,862
Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
Ross, J. S., Klement, P., Jones, A. M., Ghimire, N. J., Yan, J., Mandrus, D. G., Taniguchi, T., Watanabe, K., Kitamura, K., Yao, W., et al. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.26 · Cited by 1,690
Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
Baugher, B. W. H., Churchill, H. O. H., Yang, Y., & Jarillo-Herrero, P. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.25 · Cited by 1,523
Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2
Tonndorf, P., Schmidt, R., Böttger, P., Zhang, X., Börner, J., Liebig, A., Albrecht, M., Kloc, C., Gordan, O., Zahn, D. R. T., et al. (2013) · Optics Express · doi:10.1364/oe.21.004908 · Cited by 1,521
Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping
Mouri, S., Miyauchi, Y., & Matsuda, K. (2013) · Nano Letters · doi:10.1021/nl403036h · Cited by 1,517
Optical generation of excitonic valley coherence in monolayer WSe2
Jones, A. M., Yu, H., Ghimire, N. J., Wu, S., Aivazian, G., Ross, J. S., Zhao, B., Yan, J., Mandrus, D. G., Xiao, D., et al. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.151 · Cited by 1,459
Solar-energy conversion and light emission in an atomic monolayer p–n diode
Pospischil, A., Furchi, M. M., & Mueller, T. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.14 · Cited by 1,418
Zeng, H., Liu, G.-B., Dai, J., Yan, Y., Zhu, B., He, R., Xie, L., Xu, S., Chen, X., Yao, W., et al. (2013) · Scientific Reports · doi:10.1038/srep01608 · Cited by 1,064
Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2
Zhao, W., Ghorannevis, Z., Amara, K. K., Pang, J. R., Toh, M., Zhang, X., Kloc, C., Tan, P. H., & Eda, G. (2013) · Nanoscale · doi:10.1039/c3nr03052k · Cited by 912
Tongay, S., Zhou, J., Ataca, C., Liu, J., Kang, J. S., Matthews, T. S., You, L., Li, J., Grossman, J. C., & Wu, J. (2013) · Nano Letters · doi:10.1021/nl4011172 · Cited by 788
Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2
Desai, S. B., Seol, G., Kang, J. S., Fang, H., Battaglia, C., Kapadia, R., Ager, J. W., Guo, J., & Javey, A. (2014) · Nano Letters · doi:10.1021/nl501638a · Cited by 744
Li, H., Lu, G., Wang, Y., Yin, Z., Cong, C., He, Q., Wang, L., Ding, F., Yu, T., & Zhang, H. (2013) · Small · doi:10.1002/smll.201202919 · Cited by 659
Dielectric Screening of Excitons and Trions in Single-Layer MoS2
Lin, Y., Ling, X., Yu, L., Huang, S., Hsu, A. L., Lee, Y.-H., Kong, J., Dresselhaus, M. S., & Palacios, T. (2014) · Nano Letters · doi:10.1021/nl501988y · Cited by 644
The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2
Buscema, M., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2014) · Nano Research · doi:10.1007/s12274-014-0424-0 · Cited by 622
Wagner, C. D., Zatko, D. A., & Raymond, R. H. (1980) · Analytical Chemistry · doi:10.1021/ac50059a017 · Cited by 594
Ayari, A., Cobas, E., Ogundadegbe, O., & Fuhrer, M. S. (2007) · Journal of Applied Physics · doi:10.1063/1.2407388 · Cited by 586
Self-citationMoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts
Chuang, S., Battaglia, C., Azcatl, A., McDonnell, S., Kang, J. S., Yin, X., Tosun, M., Kapadia, R., Fang, H., Wallace, R. M., et al. (2014) · Nano Letters · doi:10.1021/nl4043505 · Cited by 575
New First Order Raman-active Modes in Few Layered Transition Metal Dichalcogenides
Terrones, H., Corro, E. D., Feng, S., Poumirol, J. M., Rhodes, D., Smirnov, D., Pradhan, N. R., Lin, Z., Nguyen, M. A. T., Elías, A. L., et al. (2014) · Scientific Reports · doi:10.1038/srep04215 · Cited by 478
Rapid and Reliable Thickness Identification of Two-Dimensional Nanosheets Using Optical Microscopy
Li, H., Wu, J., Huang, X., Lu, G., Yang, J., Lu, X., Xiong, Q., & Zhang, H. (2013) · ACS Nano · doi:10.1021/nn4047474 · Cited by 439
Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts
Chen, J.-R., Odenthal, P. M., Swartz, A. G., Floyd, G. C., Wen, H., Luo, K. Y., & Kawakami, R. K. (2013) · Nano Letters · doi:10.1021/nl4010157 · Cited by 397
Preparation and Crystal Growth of Materials with Layered Structures
(1977) · Springer eBooks · doi:10.1007/978-94-017-2750-1 · Cited by 320
HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
McDonnell, S., Brennan, B., Azcatl, A., Lu, N., Dong, H., Buie, C., Kim, J., Hinkle, C. L., Kim, M. J., & Wallace, R. M. (2013) · ACS Nano · doi:10.1021/nn404775u · Cited by 309
Photoluminescence of freestanding single- and few-layerMoS2
Scheuschner, N., Ochedowski, O., Kaulitz, A.-M., Gillen, R., Schleberger, M., & Maultzsch, J. (2014) · Physical Review B · doi:10.1103/physrevb.89.125406 · Cited by 289
Photoluminescence Quenching in Single-Layer MoS2 via Oxygen Plasma Treatment
Kang, N., Paudel, H. P., Leuenberger, M. N., Tetard, L., & Khondaker, S. I. (2014) · The Journal of Physical Chemistry C · doi:10.1021/jp506964m · Cited by 288
Effects of lower symmetry and dimensionality on Raman spectra in two-dimensional WSe2
Luo, X., Zhao, Y., Zhang, J., Toh, M., Kloc, C., Xiong, Q., & Quek, S. Y. (2013) · Physical Review B · doi:10.1103/physrevb.88.195313 · Cited by 269
Air Stable p-Doping of WSe2 by Covalent Functionalization
Zhao, P., Kiriya, D., Azcatl, A., Zhang, C., Tosun, M., Liu, Y.-S., Hettick, M., Kang, J. S., McDonnell, S., KC, S., et al. (2014) · ACS Nano · doi:10.1021/nn5047844 · Cited by 260
Synthesis of Atomically Thin WO3 Sheets from Hydrated Tungsten Trioxide
Kalantar-zadeh, K., Vijayaraghavan, A., Ham, M.-H., Zheng, H., Breedon, M., & Strano, M. S. (2010) · Chemistry of Materials · doi:10.1021/cm1019603 · Cited by 242
Anisotropic Etching of Atomically Thin MoS2
Yamamoto, M., Einstein, T. L., Fuhrer, M. S., & Cullen, W. G. (2013) · The Journal of Physical Chemistry C · doi:10.1021/jp410893e · Cited by 215
Self-citationHole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments
McDonnell, S. J., Azcatl, A., Addou, R., Gong, C., Battaglia, C., Chuang, S., Cho, K., Javey, A., & Wallace, R. M. (2014) · ACS Nano · doi:10.1021/nn501728w · Cited by 197
X-ray photoelectron spectroscopy study of supported tungsten oxide
Biloen, P. (1973) · Journal of Catalysis · doi:10.1016/0021-9517(73)90063-8 · Cited by 193
Surface Oxidation of Molybdenum Disulfide
Ross, S., & Sussman, A. (1955) · The Journal of Physical Chemistry · doi:10.1021/j150531a020 · Cited by 160
Reactivity of layer type transition metal chalcogenides towards oxidation
Jaegermann, W., & Schmeißer, D. (1986) · Surface Science · doi:10.1016/0039-6028(86)90666-7 · Cited by 141
Thickness-dependent patterning of MoS2 sheets with well-oriented triangular pits by heating in air
Zhou, H., Fang, Y., Liu, Y., Zou, X., Cong, C., Qiu, C., Yu, T., Yan, Z., Shen, X., Sun, L., et al. (2013) · Nano Research · doi:10.1007/s12274-013-0346-2 · Cited by 137
Low‐temperature photoluminescence of oxide‐covered single‐layer MoS2
Plechinger, G., Schrettenbrunner, F. ‐., Eroms, J., Weiss, D., Schüller, C., & Korn, T. (2012) · physica status solidi (RRL) - Rapid Research Letters · doi:10.1002/pssr.201105589 · Cited by 108
Monolayers of MoS2 as an oxidation protective nanocoating material
Şen, H. Ş., Şahin, H., Peeters, F. M., et al. (2014) · Journal of Applied Physics · doi:10.1063/1.4893790 · Cited by 60
Reactivity of molybdenum disulfide surfaces studied by XPS
Suzuki, K., Soma, M., Onishi, T., & Tamaru, K. (1981) · Journal of Electron Spectroscopy and Related Phenomena · doi:10.1016/0368-2048(81)80014-x · Cited by 53
Cited by
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Metadata
- Authors
- Yamamoto, M., Dutta, S., Aikawa, S., Nakaharai, S., Wakabayashi, K., Fuhrer, M. S., Ueno, K., & Tsukagoshi, K.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2015-02-06
- Volume
- 15
- Issue
- 3
- Pages
- 2067-2073
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2320406738
- Cited by
- 258
- References
- 48
- FWCI
- 9.59
- Type
- journal article
- Language
- en
- Open access
- closed
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