The DOI matches its Crossref record; 16 of the 16 references it cites were found in a registry or an index.
Control of InAs Nanowire Growth Directions on Si
Abstract
We report on control of growth directions of InAs nanowires on Si substrate. We achieved to integrate vertical InAs nanowires on Si by modifying initial Si(111) surface in selective-area metal-organic vapor phase epitaxy with flow-rate modulation mode at low temperature. Cross-sectional transmission electron microscope and Raman scattering showed that misfit dislocation with local strains were accommodated in the interface.
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Cites
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Cited by
Yan, R., Gargas, D., & Yang, P. (2009) · Nature Photonics · doi:10.1038/nphoton.2009.184 · Cited by 1,635
Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions
Ning, C.-Z., Dou, L., & Yang, P. (2017) · Nature Reviews Materials · doi:10.1038/natrevmats.2017.70 · Cited by 455
Metadata
- Authors
- Tomioka, K., Motohisa, J., Hara, S., & Fukui, T.
- Venue
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Published
- 2008-09-11
- Volume
- 8
- Issue
- 10
- Pages
- 3475-3480
- ISSN
- 1530-6984 (ISSN-L)
- 1530-6992
- OpenAlex
- W2027296149
- Cited by
- 356
- References
- 16
- FWCI
- 16.63
- Type
- journal article
- Language
- en
- Open access
- closed
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