The DOI matches its Crossref record; 27 of the 27 references it cites were found in a registry or an index.
Colloidal PbS Quantum Dot Solar Cells with High Fill Factor
Abstract
We fabricate PbS colloidal quantum dot (QD)-based solar cells using a fullerene derivative as the electron-transporting layer (ETL). A thiol treatment and oxidation process are used to modify the morphology and electronic structure of the QD films, resulting in devices that exhibit a fill factor (FF) as high as 62%. We also show that, for QDs with a band gap of less than 1 eV, an open-circuit voltage (VOC) of 0.47 V can be achieved. The power conversion efficiency reaches 1.3% under 1 sun AM1.5 test conditions and 2.4% under monochromatic infrared (lambda=1310 nm) illumination. A consistent mechanism for device operation is developed through a circuit model and experimental measurements, shedding light on new approaches for optimization of solar cell performance by modifying the interface between the QDs and the neighboring charge transport layers.
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Cites
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Cited by
Improved performance and stability in quantum dot solar cells through band alignment engineering
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Self-citationAir-stable n-type colloidal quantum dot solids
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Self-citationPredicting Nanocrystal Shape through Consideration of Surface-Ligand Interactions
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Metadata
- Authors
- Zhao, N., Osedach, T. P., Chang, L.-Y., Geyer, S. M., Wanger, D., Binda, M. T., Arango, A. C., Bawendi, M. G., & Bulovic, V.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2010-06-30
- Volume
- 4
- Issue
- 7
- Pages
- 3743-3752
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2027202170
- Cited by
- 454
- References
- 27
- FWCI
- 17.92
- Type
- journal article
- Language
- en
- Open access
- closed
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