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The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene
Abstract
Electrochemical charging has been applied to study the influence of doping on the intensity of the various Raman features observed in chemical vapor-deposition-grown graphene. Three different laser excitation energies have been used to probe the influence of the excitation energy on the behavior of both the G and G' modes regarding their dependence on doping. The intensities of both the G and G' modes exhibit a significant but different dependence on doping. While the intensity of the G' band monotonically decreases with increasing magnitude of the electrode potential (positive or negative), for the G band a more complex behavior has been found. The striking feature is an increase of the Raman intensity of the G mode at a high value of the positive electrode potential. Furthermore, the observed increase of the Raman intensity of the G mode is found to be a function of laser excitation energy.
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Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
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Raman spectroscopy as a versatile tool for studying the properties of graphene
Ferrari, A. C., & Basko, D. M. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.46 · Cited by 7,405
Electrochemistry of Graphene and Related Materials
Ambrosi, A., Chua, C. K., Bonanni, A., & Pumera, M. (2014) · Chemical Reviews · doi:10.1021/cr500023c · Cited by 1,208
Grapheneviasonication assisted liquid-phase exfoliation
Ciesielski, A., & Samorì, P. (2014) · Chem. Soc. Rev. · doi:10.1039/c3cs60217f · Cited by 1,207
Metadata
- Authors
- Kalbac, M., Reina-Cecco, A., Farhat, H., Kong, J., Kavan, L., & Dresselhaus, M. S.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2010-10-08
- Volume
- 4
- Issue
- 10
- Pages
- 6055-6063
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2136979982
- Cited by
- 273
- References
- 1
- FWCI
- 8.03
- Type
- journal article
- Language
- en
- Open access
- closed
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- Kalbac, M., Reina-Cecco, A., Farhat, H., Kong, J., Kavan, L., & Dresselhaus, M. S. (2010). The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene. ACS Nano. https://doi.org/10.1021/nn1010914
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