The DOI matches its Crossref record; 29 of the 29 references it cites were found in a registry or an index.
Growth of Bilayer Graphene on Insulating Substrates
Abstract
Here we demonstrate a general transfer-free method to directly grow large areas of uniform bilayer graphene on insulating substrates (SiO(2), h-BN, Si(3)N(4), and Al(2)O(3)) from solid carbon sources such as films of poly(2-phenylpropyl)methysiloxane, poly(methyl methacrylate), polystyrene, and poly(acrylonitrile-co-butadiene-co-styrene), the latter leading to N-doped bilayer graphene due to its inherent nitrogen content. Alternatively, the carbon feeds can be prepared from a self-assembled monolayer of butyltriethoxysilane atop a SiO(2) layer. The carbon feedstocks were deposited on the insulating substrates and then caped with a layer of nickel. At 1000 °C, under low pressure and a reducing atmosphere, the carbon source was transformed into a bilayer graphene film on the insulating substrates. The Ni layer was removed by dissolution, affording the bilayer graphene directly on the insulator with no traces of polymer left from a transfer step. The bilayer nature of as-grown samples was demonstrated by I(G)/I(2D) Raman mapping, the statistics of the full-width at half-maximum of the Raman 2D peak, the selected area electron diffraction patterns over a large area, and randomly imaged graphene edges by high-resolution transmission electron microscopy.
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Cited by
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Metadata
- Authors
- Yan, Z., Peng, Z., Sun, Z., Yao, J., Zhu, Y., Liu, Z., Ajayan, P. M., & Tour, J. M.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2011-09-12
- Volume
- 5
- Issue
- 10
- Pages
- 8187-8192
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W1998400775
- Cited by
- 301
- References
- 29
- FWCI
- 15.80
- Type
- journal article
- Language
- en
- Open access
- closed
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