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Cited by 227

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Raman Characterization of ABA- and ABC-Stacked Trilayer Graphene

Cong, Chunxiao, Yu, Ting, Sato, Kentaro, Shang, Jingzhi, Saito, Riichiro, Dresselhaus, Gene F., Dresselhaus, Mildred S.·2011·ACS Nano
DOI 10.1021/nn203472f
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Abstract

Bernal (ABA stacking order) and rhombohedral (ABC) trilayer graphene (3LG) are characterized by Raman spectroscopy. From a systematic experimental and theoretical analysis of the Raman modes in both of these 3LGs, we show that the G band, G' (2D) band, and the intermediate-frequency combination modes of 3LGs are sensitive to the stacking order of 3LG. The phonon wavevector q, that gives the double resonance Raman spectra is larger in ABC than ABA, which is the reason why we get the different Raman frequencies and their spectral widths for ABA and ABC 3LG. The weak electron-phonon interaction in ABC-stacked 3LG and the localized strain at the boundary between ABC- and ABA-stacked domains are clearly reflected by the softening of the G mode and the G' mode, respectively.

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Metadata

Authors
Cong, C., Yu, T., Sato, K., Shang, J., Saito, R., Dresselhaus, G. F., & Dresselhaus, M. S.
Venue
ACS Nano
Publisher
American Chemical Society (ACS)
Published
2011-10-11
Volume
5
Issue
11
Pages
8760-8768
ISSN
  • 1936-0851 (ISSN-L)
  • 1936-086X
DOI
10.1021/nn203472f
OpenAlex
W1981153415
Cited by
227
References
2
FWCI
9.14
Type
journal article
Language
en
Open access
closed

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