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Toward the Controlled Synthesis of Hexagonal Boron Nitride Films
Abstract
Atomically smooth hexagonal boron nitride (h-BN) layers have very useful properties and thus potential applications for protective coatings, deep ultraviolet (DUV) emitters, and as a dielectric for nanoelectronics devices. In this paper, we report on the growth of h-BN by a low-pressure chemical vapor deposition (LPCVD) process using diborane and ammonia as the gas precursors. The use of LPCVD allows synthesis of h-BN with a controlled number of layers defined by the growth conditions, temperature, time, and gas partial pressure. Furthermore, few-layer h-BN was also grown by a sequential growth method, and insights into the growth mechanism are described, thus forming the basis of future growth of h-BN by atomic layer epitaxy.
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Cited by
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
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Metadata
- Authors
- Ismach, A., Chou, H., Ferrer, D. A., Wu, Y., McDonnell, S., Floresca, H. C., Covacevich, A., Pope, C., Piner, R., Kim, M. J., Wallace, R. M., Colombo, L., & Ruoff, R. S.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2012-06-21
- Volume
- 6
- Issue
- 7
- Pages
- 6378-6385
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2334892547
- Cited by
- 346
- References
- 20
- FWCI
- 9.70
- Type
- journal article
- Language
- en
- Open access
- closed
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