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Cited by 949

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Coherent Atomic and Electronic Heterostructures of Single-Layer MoS2

Eda, Goki, Fujita, Takeshi, Yamaguchi, Hisato, Voiry, Damien, Chen, Mingwei, Chhowalla, Manish·2012·ACS Nano

Abstract

Nanoscale heterostructures with quantum dots, nanowires, and nanosheets have opened up new routes toward advanced functionalities and implementation of novel electronic and photonic devices in reduced dimensions. Coherent and passivated heterointerfaces between electronically dissimilar materials can be typically achieved through composition or doping modulation as in GaAs/AlGaAs and Si/NiSi or heteroepitaxy of lattice matched but chemically distinct compounds. Here we report that single layers of chemically exfoliated MoS(2) consist of electronically dissimilar polymorphs that are lattice matched such that they form chemically homogeneous atomic and electronic heterostructures. High resolution scanning transmission electron microscope (STEM) imaging reveals the coexistence of metallic and semiconducting phases within the chemically homogeneous two-dimensional (2D) MoS(2) nanosheets. These results suggest potential for exploiting molecular scale electronic device designs in atomically thin 2D layers.

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Crossref · 10.1021/nn302422x

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Metadata

Authors
Eda, G., Fujita, T., Yamaguchi, H., Voiry, D., Chen, M., & Chhowalla, M.
Venue
ACS Nano
Published
2012-07-20
Volume
6
Issue
8
Pages
7311-7317
ISSN
  • 1936-0851 (ISSN-L)
  • 1936-086X
OpenAlex
W2104864546
Cited by
949
References
2
FWCI
24.47
Type
journal article
Language
en
Open access
closed

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