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Breakdown of High-Performance Monolayer MoS2 Transistors
Open accessAbstract
Two-dimensional (2D) materials such as monolayer molybdenum disulfide (MoS(2)) are extremely interesting for integration in nanoelectronic devices where they represent the ultimate limit of miniaturization in the vertical direction. Thanks to the presence of a band gap and subnanometer thickness, monolayer MoS(2) can be used for the fabrication of transistors exhibiting extremely high on/off ratios and very low power dissipation. Here, we report on the development of 2D MoS(2) transistors with improved performance due to enhanced electrostatic control. Our devices show currents in the 100 μA/μm range and transconductance exceeding 20 μS/μm as well as current saturation. We also record electrical breakdown of our devices and find that MoS(2) can support very high current densities, exceeding the current-carrying capacity of copper by a factor of 50. Our results push the performance limit of MoS(2) and open the way to their use in low-power and low-cost analog and radio frequency circuits.
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Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
High-field electrical transport in single-wall carbon nanotubes
Yao, Z., Kane, C. L., & Dekker, C. (2000) · Physical Review Letters · doi:10.1103/physrevlett.84.2941 · Cited by 1,501
Cited by
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
Butler, S. Z., Hollen, S. M., Cao, L., Cui, Y., Gupta, J. A., Gutiérrez, H. R., Heinz, T. F., Hong, S. S., Huang, J., Ismach, A. F., et al. (2013) · ACS Nano · doi:10.1021/nn400280c · Cited by 4,878
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Two-dimensional transistors beyond graphene and TMDCs
Liu, Y., Duan, X., Huang, Y., & Duan, X. (2018) · Chemical Society Reviews · doi:10.1039/c8cs00318a · Cited by 474
Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles
Li, X., Mullen, J. T., Jin, Z., Borysenko, K. M., Buongiorno Nardelli, M., & Kim, K. W. (2013) · Physical Review B · doi:10.1103/physrevb.87.115418 · Cited by 462
Pressure-Induced Metallization of Molybdenum Disulfide
Chi, Z.-H., Zhao, X.-M., Zhang, H., Goncharov, A. F., Lobanov, S. S., Kagayama, T., Sakata, M., & Chen, X.-J. (2014) · Physical Review Letters · doi:10.1103/physrevlett.113.036802 · Cited by 309
Metadata
- Authors
- Lembke, D., & Kis, A.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2012-10-05
- Volume
- 6
- Issue
- 11
- Pages
- 10070-10075
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2124029745
- Cited by
- 416
- References
- 4
- FWCI
- 14.77
- Type
- journal article
- Language
- en
- Open access
- hybrid
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
