The DOI matches its Crossref record; 35 of the 35 references it cites were found in a registry or an index.
Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles
Open accessAbstract
The electron-phonon interaction and related transport properties are investigated in monolayer silicene and MoS${}_{2}$ by using a density functional theory calculation combined with a full-band Monte Carlo analysis. In the case of silicene, the results illustrate that the out-of-plane acoustic phonon mode may play the dominant role unlike its close relative, graphene. The small energy of this phonon mode, originating from the weak $sp$${}^{2}$ $\ensuremath{\pi}$ bonding between Si atoms, contributes to the high scattering rate and significant degradation in electron transport. In MoS${}_{2}$, the longitudinal acoustic phonons show the strongest interaction with electrons. The key factor in this material appears to be the $Q$ valleys located between the $\ensuremath{\Gamma}$ and $K$ points in the first Brillouin zone as they introduce additional intervalley scattering. The analysis also reveals the potential impact of extrinsic screening by other carriers and/or adjacent materials. Finally, the effective deformation potential constants are extracted for all relevant intrinsic electron-phonon scattering processes in both materials.
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Cited by
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Metadata
- Authors
- Li, X., Mullen, J. T., Jin, Z., Borysenko, K. M., Buongiorno Nardelli, M., & Kim, K. W.
- Venue
- Physical Review B
- Publisher
- American Physical Society (APS)
- Published
- 2013-03-15
- Volume
- 87
- Issue
- 11
- ISSN
- 1098-0121 (ISSN-L)
- 1550-235X
- OpenAlex
- W2027982771
- Cited by
- 462
- References
- 35
- FWCI
- 16.43
- Type
- journal article
- Language
- en
- Open access
- bronze
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