The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments
Abstract
Few-layered MoS2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use in harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain (up to 13.3), high detectivity (up to ~10(10) cm Hz(1/2)/W), fast photoresponse (rise time of ~70 μs and fall time of ~110 μs), and high thermal stability (at a working temperature of up to 200 °C). Ultrahigh responsivity (0.57 A/W) of few-layer MoS2 at 532 nm is due to the high optical absorption (~10% despite being less than 2 nm in thickness) and a high photogain, which sets up a new record that was not achievable in 2D nanomaterials previously. This study opens avenues to develop 2D nanomaterial-based optoelectronics for harsh environments in imaging techniques and light-wave communications as well as in future memory storage and optoelectronic circuits.
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Cites
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Self-citationUltrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures
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Epitaxial Monolayer MoS2 on Mica with Novel Photoluminescence
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Ultrabroadband MoS2 Photodetector with Spectral Response from 445 to 2717 nm
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Metadata
- Authors
- Tsai, D.-S., Liu, K.-K., Lien, D.-H., Tsai, M.-L., Kang, C.-F., Lin, C.-A., Li, L.-J., & He, J.-H.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2013-04-22
- Volume
- 7
- Issue
- 5
- Pages
- 3905-3911
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2096329902
- Cited by
- 665
- References
- 3
- FWCI
- 26.49
- Type
- journal article
- Language
- en
- Open access
- closed
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