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Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures
Open accessAbstract
Due to its high carrier mobility, broadband absorption, and fast response time, the semi-metallic graphene is attractive for optoelectronics. Another two-dimensional semiconducting material molybdenum disulfide (MoS2) is also known as light- sensitive. Here we show that a large-area and continuous MoS2 monolayer is achievable using a CVD method and graphene is transferable onto MoS2. We demonstrate that a photodetector based on the graphene/MoS2 heterostructure is able to provide a high photogain greater than 10(8). Our experiments show that the electron-hole pairs are produced in the MoS2 layer after light absorption and subsequently separated across the layers. Contradictory to the expectation based on the conventional built-in electric field model for metal-semiconductor contacts, photoelectrons are injected into the graphene layer rather than trapped in MoS2 due to the presence of a perpendicular effective electric field caused by the combination of the built-in electric field, the applied electrostatic field, and charged impurities or adsorbates, resulting in a tuneable photoresponsivity.
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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Fine Structure Constant Defines Visual Transparency of Graphene
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Graphene photodetectors for high-speed optical communications
Mueller, T., Xia, F., & Avouris, P. (2010) · Nature Photonics · doi:10.1038/nphoton.2010.40 · Cited by 2,474
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Photodetectors based on graphene, other two-dimensional materials and hybrid systems
Koppens, F. H. L., Mueller, T., Avouris, P., Ferrari, A. C., Vitiello, M. S., & Polini, M. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.215 · Cited by 3,828
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
Furchi, M. M., Pospischil, A., Libisch, F., Burgdörfer, J., & Mueller, T. (2014) · Nano Letters · doi:10.1021/nl501962c · Cited by 1,085
Photocurrent generation with two-dimensional van der Waals semiconductors
Buscema, M., Island, J. O., Groenendijk, D. J., Blanter, S. I., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00106d · Cited by 1,051
Shi, Y., Li, H., & Li, L.-J. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00256c · Cited by 845
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Metadata
- Authors
- Zhang, W., Chuu, C.-P., Huang, J.-K., Chen, C.-H., Tsai, M.-L., Chang, Y.-H., Liang, C.-T., Chen, Y.-Z., Chueh, Y.-L., He, J.-H., Chou, M.-Y., & Li, L.-J.
- Venue
- Scientific Reports
- Published
- 2014-01-23
- Volume
- 4
- Issue
- 1
- Pages
- 3826-3826
- ISSN
- 2045-2322 (ISSN-L)
- OpenAlex
- W2067001296
- Cited by
- 911
- References
- 4
- FWCI
- 58.22
- Type
- journal article
- Language
- en
- Open access
- gold
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- Zhang, W., Chuu, C.-P., Huang, J.-K., Chen, C.-H., Tsai, M.-L., Chang, Y.-H., Liang, C.-T., Chen, Y.-Z., Chueh, Y.-L., He, J.-H., Chou, M.-Y., & Li, L.-J. (2014). Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures. Scientific Reports. https://doi.org/10.1038/srep03826
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