The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
Open accessAbstract
We report the fabrication of ionic liquid (IL)-gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron mobility μ ≈ 60 cm(2) V(-1) s(-1) at 250 K in IL-gated devices exceeds significantly that of comparable back-gated devices. IL-FETs display a mobility increase from ≈ 100 cm(2) V(-1) s(-1) at 180 K to ≈ 220 cm(2) V(-1) s(-1) at 77 K in good agreement with the true channel mobility determined from four-terminal measurements, ambipolar behavior with a high ON/OFF ratio >10(7) (10(4)) for electrons (holes), and a near ideal subthreshold swing of ≈ 50 mV/dec at 250 K. We attribute the observed performance enhancement, specifically the increased carrier mobility that is limited by phonons, to the reduction of the Schottky barrier at the source and drain electrode by band bending caused by the ultrathin IL dielectric layer.
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Cites
Superior Thermal Conductivity of Single-Layer Graphene
Balandin, A. A., Ghosh, S., Bao, W., Calizo, I., Teweldebrhan, D., Miao, F., & Lau, C. N. (2008) · Nano Letters · doi:10.1021/nl0731872 · Cited by 13,823
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Two-Dimensional Phonon Transport in Supported Graphene
Seol, J. H., Jo, I., Moore, A. L., Lindsay, L., Aitken, Z. H., Pettes, M. T., Li, X., Yao, Z., Huang, R., Broido, D., et al. (2010) · Science · doi:10.1126/science.1184014 · Cited by 1,926
Cited by
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Schmidt, H., Giustiniano, F., & Eda, G. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00275c · Cited by 466
Chuang, H.-J., Chamlagain, B., Koehler, M., Perera, M. M., Yan, J., Mandrus, D., Tománek, D., & Zhou, Z. (2016) · Nano Letters · doi:10.1021/acs.nanolett.5b05066 · Cited by 426
Self-citationElectron and Hole Mobilities in Single-Layer WSe2
Allain, A., & Kis, A. (2014) · ACS Nano · doi:10.1021/nn5021538 · Cited by 382
Metadata
- Authors
- Perera, M. M., Lin, M.-W., Chuang, H.-J., Chamlagain, B. P., Wang, C., Tan, X., Cheng, M. M.-C., Tománek, D., & Zhou, Z.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2013-04-23
- Volume
- 7
- Issue
- 5
- Pages
- 4449-4458
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W2164160345
- Cited by
- 344
- References
- 3
- FWCI
- 14.21
- Type
- journal article
- Language
- en
- Open access
- green
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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