The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
High-Sensitivity Photodetectors Based on Multilayer GaTe Flakes
Open accessAbstract
Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric and optoelectronic properties of nano GaTe flakes as layered materials are described in this article. The transistor fabricated from multilayer GaTe shows a p-type action with a hole mobility of about 0.2 cm(2) V(-1) s(-1). The gate transistor exhibits a high photoresponsivity of 10(4) A/W, which is greatly better than that of graphene, MoS2, and other layered compounds. Meanwhile, the response speed of 6 ms is also very fast. Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer GaTe is a promising candidate for future optoelectronic and photosensitive device applications.
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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Fine Structure Constant Defines Visual Transparency of Graphene
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Cited by
Photodetectors based on graphene, other two-dimensional materials and hybrid systems
Koppens, F. H. L., Mueller, T., Avouris, P., Ferrari, A. C., Vitiello, M. S., & Polini, M. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.215 · Cited by 3,828
Photocurrent generation with two-dimensional van der Waals semiconductors
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Emerging in‐plane anisotropic two‐dimensional materials
Li, L., Han, W., Pi, L., Niu, P., Han, J., Wang, C., Su, B., Li, H., Xiong, J., Bando, Y., et al. (2019) · InfoMat · doi:10.1002/inf2.12005 · Cited by 382
Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition
Zhou, J., Zeng, Q., Lv, D., Sun, L., Niu, L., Fu, W., Liu, F., Shen, Z., Jin, C., & Liu, Z. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b01590 · Cited by 308
Self-citation
Metadata
- Authors
- Liu, F., Shimotani, H., Shang, H., Kanagasekaran, T., Zólyomi, V., Drummond, N., Fal’ko, V. I., & Tanigaki, K.
- Venue
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Published
- 2014-01-06
- Volume
- 8
- Issue
- 1
- Pages
- 752-760
- ISSN
- 1936-0851 (ISSN-L)
- 1936-086X
- OpenAlex
- W1978266694
- Cited by
- 367
- References
- 5
- FWCI
- 10.51
- Type
- journal article
- Language
- en
- Open access
- green
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