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Quantized conductance atomic switch
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Cites
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Cited by
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Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Self-citationMemristive devices for computing
Yang, J. J., Strukov, D. B., & Stewart, D. R. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2012.240 · Cited by 3,885
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Metadata
- Authors
- Terabe, K., Hasegawa, T., Nakayama, T., & Aono, M.
- Venue
- Nature
- Published
- 2005-01
- Volume
- 433
- Issue
- 7021
- Pages
- 47-50
- ISSN
- 0028-0836 (ISSN-L)
- 1476-4687
- OpenAlex
- W2070856049
- Cited by
- 1,208
- References
- 13
- FWCI
- 45.76
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- www.springer.com/tdm (tdm)
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