The DOI matches its Crossref record; 33 of the 33 references it cites were found in a registry or an index.
Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
Open accessAbstract
Concepts of non-volatile memory to replace conventional flash memory have suffered from low material reliability and high off-state current, and the use of a thick, rigid blocking oxide layer in flash memory further restricts vertical scale-up. Here, we report a two-terminal floating gate memory, tunnelling random access memory fabricated by a monolayer MoS 2/h-BN/monolayer graphene vertical stack. Our device uses a two-terminal electrode for current flow in the MoS 2 channel and simultaneously for charging and discharging the graphene floating gate through the h-BN tunnelling barrier. By effective charge tunnelling through crystalline h-BN layer and storing charges in graphene layer, our memory device demonstrates an ultimately low off-state current of 10−14 A, leading to ultrahigh on/off ratio over 10 9, about ∼10 3 times higher than other two-terminal memories. Furthermore, the absence of thick, rigid blocking oxides enables high stretchability (>19%) which is useful for soft electronics.
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Cites
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Self-citationField-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
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Cited by
Two-dimensional materials for next-generation computing technologies
Liu, C., Chen, H., Wang, S., Liu, Q., Jiang, Y.-G., Zhang, D. W., Liu, M., & Zhou, P. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0724-3 · Cited by 1,045
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Hou, Y.-X., Li, Y., Zhang, Z.-C., Li, J.-Q., Qi, D.-H., Chen, X.-D., Wang, J.-J., Yao, B.-W., Yu, M.-X., Lu, T.-B., et al. (2021) · ACS Nano · doi:10.1021/acsnano.0c08921 · Cited by 438
Liu, C., Yan, X., Song, X., Ding, S., Zhang, D. W., & Zhou, P. (2018) · Nature Nanotechnology · doi:10.1038/s41565-018-0102-6 · Cited by 417
2D Material Based Synaptic Devices for Neuromorphic Computing
Cao, G., Meng, P., Chen, J., Liu, H., Bian, R., Zhu, C., Liu, F., & Liu, Z. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202005443 · Cited by 382
Metadata
- Authors
- Vu, Q. A., Shin, Y. S., Kim, Y. R., Nguyen, V. L., Kang, W. T., Kim, H., Luong, D. H., Lee, I. M., Lee, K., Ko, D.-S., Heo, J., Park, S., Lee, Y. H., & Yu, W. J.
- Venue
- Nature Communications
- Published
- 2016-09-02
- Volume
- 7
- Issue
- 1
- Pages
- 12725-12725
- ISSN
- 2041-1723 (ISSN-L)
- OpenAlex
- W2515223004
- Cited by
- 371
- References
- 33
- FWCI
- 12.08
- Type
- journal article
- Language
- en
- Open access
- gold
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- Vu, Q. A., Shin, Y. S., Kim, Y. R., Nguyen, V. L., Kang, W. T., Kim, H., Luong, D. H., Lee, I. M., Lee, K., Ko, D.-S., Heo, J., Park, S., Lee, Y. H., & Yu, W. J. (2016). Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio. Nature Communications. https://doi.org/10.1038/ncomms12725
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