The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.
Gate-tuned normal and superconducting transport at the surface of a topological insulator
Open accessAbstract
Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to occur, and to be experimentally accessible via transport measurements in suitably designed electronic devices. Here we study transport through superconducting junctions fabricated on thin Bi2Se3 single crystals, equipped with a gate electrode. In the presence of perpendicular magnetic field B, sweeping the gate voltage enables us to observe the filling of the Dirac fermion Landau levels, whose character evolves continuously from electron- to hole-like. When B=0, a supercurrent appears, whose magnitude can be gate tuned, and is minimum at the charge neutrality point determined from the Landau level filling. Our results demonstrate how gated nano-electronic devices give control over normal and superconducting transport of Dirac fermions at an individual surface of a three-dimensional topological insulators. Topological insulators are a unique class of materials characterized by exotic metallic states at their surface, while remaining insulated in the bulk. Sacépéet al. show how to manipulate normal and superconducting electronic transport at the surface of the topological insulator Bi2Se3, by tuning a gate-voltage to vary the electronic density.
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Citations
Cites
The electronic properties of graphene
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Quantum Spin Hall Insulator State in HgTe Quantum Wells
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Cited by
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
Butler, S. Z., Hollen, S. M., Cao, L., Cui, Y., Gupta, J. A., Gutiérrez, H. R., Heinz, T. F., Hong, S. S., Huang, J., Ismach, A. F., et al. (2013) · ACS Nano · doi:10.1021/nn400280c · Cited by 4,878
Weyl and Dirac semimetals in three-dimensional solids
Armitage, N. P., Mele, E. J., & Vishwanath, A. (2018) · Reviews of Modern Physics · doi:10.1103/revmodphys.90.015001 · Cited by 4,528
“Such Shubnikov-de Haas (SdH) oscillation experiments have been extensively in studies of 2D materials like graphene (Novoselov et al., 2005; Zhang et al., 2005) and topological insulator surface states (Analytis et al., 2010; Qu et al., 2010; Sacépé et al., 2011; Taskin and Ando, 2011).”
BackgroundTopological Insulator Materials
Ando, Y. (2013) · Journal of the Physical Society of Japan · doi:10.7566/jpsj.82.102001 · Cited by 1,789
Quantum Transport Evidence for the Three-Dimensional Dirac Semimetal Phase inCd3As2
He, L. P., Hong, X. C., Dong, J. K., Pan, J., Zhang, Z., Zhang, J., & Li, S. Y. (2014) · Physical Review Letters · doi:10.1103/physrevlett.113.246402 · Cited by 478
Josephson supercurrent through a topological insulator surface state
Veldhorst, M., Snelder, M., Hoek, M., Gang, T., Guduru, V. K., Wang, X. L., Zeitler, U., van der Wiel, W. G., Golubov, A. A., Hilgenkamp, H., et al. (2012) · Nature Materials · doi:10.1038/nmat3255 · Cited by 326
Metadata
- Authors
- Sacépé, B., Oostinga, J. B., Li, J., Ubaldini, A., Couto, N. J. G., Giannini, E., & Morpurgo, A. F.
- Venue
- Nature Communications
- Published
- 2011-12-06
- Volume
- 2
- Issue
- 1
- Pages
- 575-575
- ISSN
- 2041-1723 (ISSN-L)
- OpenAlex
- W2138343872
- Cited by
- 283
- References
- 14
- FWCI
- 20.51
- Type
- journal article
- Language
- en
- Open access
- hybrid
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- Sacépé, B., Oostinga, J. B., Li, J., Ubaldini, A., Couto, N. J. G., Giannini, E., & Morpurgo, A. F. (2011). Gate-tuned normal and superconducting transport at the surface of a topological insulator. Nature Communications. https://doi.org/10.1038/ncomms1586
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