The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers
Open accessAbstract
In monolayer group-VI transition metal dichalcogenides, charge carriers have spin and valley degrees of freedom, both associated with magnetic moments. On the other hand, the layer degree of freedom in multilayers is associated with electrical polarization. Here we show that transition metal dichalcogenide bilayers offer an unprecedented platform to realize a strong coupling between the spin, valley and layer pseudospin of holes. Such coupling gives rise to the spin Hall effect and spin-dependent selection rule for optical transitions in inversion symmetric bilayer and leads to a variety of magnetoelectric effects permitting quantum manipulation of these electronic degrees of freedom. Oscillating electric and magnetic fields can both drive the hole spin resonance where the two fields have valley-dependent interference, making an interplay between the spin and valley as information carriers possible for potential valley-spintronic applications. We show how to realize quantum gates on the spin qubit controlled by the valley bit. Exploiting as many degrees of freedom of the electron as possible will make future electronic devices more versatile. Here, the authors show that coupling of spin, layer pseudospin and valley degrees of freedom in transition metal dichalcogenide bilayers makes them a promising platform for this purpose.
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Citations
Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Spin-orbit qubit in a semiconductor nanowire
Nadj-Perge, S., Frolov, S. M., Bakkers, E. P. A. M., & Kouwenhoven, L. P. (2010) · Nature · doi:10.1038/nature09682 · Cited by 703
Cited by
Spin and pseudospins in layered transition metal dichalcogenides
Xu, X., Yao, W., Xiao, D., & Heinz, T. F. (2014) · Nature Physics · doi:10.1038/nphys2942 · Cited by 2,855
Self-citationSchaibley, J. R., Yu, H., Clark, G., Rivera, P., Ross, J. S., Seyler, K. L., Yao, W., & Xu, X. (2016) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.55 · Cited by 2,652
Self-citationElectrical control of 2D magnetism in bilayer CrI3
Huang, B., Clark, G., Klein, D. R., MacNeill, D., Navarro-Moratalla, E., Seyler, K. L., Wilson, N., McGuire, M. A., Cobden, D. H., Xiao, D., et al. (2018) · Nature Nanotechnology · doi:10.1038/s41565-018-0121-3 · Cited by 1,362
Self-citationThree-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
Liu, G.-B., Shan, W.-Y., Yao, Y., Yao, W., & Xiao, D. (2013) · Physical Review B · doi:10.1103/physrevb.88.085433 · Cited by 1,012
Self-citationLiu, G.-B., Xiao, D., Yao, Y., Xu, X., & Yao, W. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00301b · Cited by 698
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Metadata
- Authors
- Gong, Z., Liu, G.-B., Yu, H., Xiao, D., Cui, X., Xu, X., & Yao, W.
- Venue
- Nature Communications
- Published
- 2013-06-19
- Volume
- 4
- Issue
- 1
- Pages
- 2053-2053
- ISSN
- 2041-1723 (ISSN-L)
- OpenAlex
- W2155116009
- Cited by
- 379
- References
- 5
- FWCI
- 13.47
- Type
- journal article
- Language
- en
- Open access
- bronze
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