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Role of domain walls in the abnormal photovoltaic effect in BiFeO3

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Bhatnagar, Akash, Roy Chaudhuri, Ayan, Heon Kim, Young, Hesse, Dietrich, Alexe, Marin·2013·Nature Communications

Abstract

Recently, the anomalous photovoltaic (PV) effect in BiFeO3 (BFO) thin films, which resulted in open circuit voltages (Voc) considerably larger than the band gap of the material, has generated a revival of the entire field of photoferroelectrics. Here, via temperature-dependent PV studies, we prove that the bulk photovoltaic (BPV) effect, which has been studied in the past for many non-centrosymmetric materials, is at the origin of the anomalous PV effect in BFO films. Moreover, we show that irrespective of the measurement geometry, Voc as high as 50 V can be achieved by controlling the conductivity of domain walls (DW). We also show that photoconductivity of the DW is markedly higher than in the bulk of BFO. The origin of the abnormal photovoltaic effect in bismuth ferrite thin films, which causes voltages larger than the band gap, is poorly understood. Bhatnagar et al.show that this effect can be attributed to a bulk photovoltaic effect and that it can be enhanced by controlling domain wall conductivity.

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Metadata

Authors
Bhatnagar, A., Roy Chaudhuri, A., Heon Kim, Y., Hesse, D., & Alexe, M.
Venue
Nature Communications
Published
2013-11-27
Volume
4
Issue
1
ISSN
2041-1723 (ISSN-L)
OpenAlex
W2151853087
Cited by
586
References
1
FWCI
12.36
Type
journal article
Language
en
Open access
hybrid

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CoChat. (2026). Citation check: Role of domain walls in the abnormal photovoltaic effect in BiFeO3. https://app.cochat.ai/papers/10.1038/ncomms3835
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Bhatnagar, A., Roy Chaudhuri, A., Heon Kim, Y., Hesse, D., & Alexe, M. (2013). Role of domain walls in the abnormal photovoltaic effect in BiFeO3. Nature Communications. https://doi.org/10.1038/ncomms3835

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