Cited by 375Thermal properties of materialsThermal Radiation and Cooling TechnologiesAdvanced Thermoelectric Materials and Devices

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Precise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers

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Pernot, G., Stoffel, M., Savic, I., Pezzoli, F., Chen, P., Savelli, G., Jacquot, A., Schumann, J., Denker, U., Mönch, I., Deneke, Ch., Schmidt, O. G., Rampnoux, J. M., Wang, S., Plissonnier, M., Rastelli, A., Dilhaire, S., Mingo, N.·2010·Nature Materials

DOI 10.1038/nmat2752

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Abstract

The ability to precisely control the thermal conductivity (kappa) of a material is fundamental in the development of on-chip heat management or energy conversion applications. Nanostructuring permits a marked reduction of kappa of single-crystalline materials, as recently demonstrated for silicon nanowires. However, silicon-based nanostructured materials with extremely low kappa are not limited to nanowires. By engineering a set of individual phonon-scattering nanodot barriers we have accurately tailored the thermal conductivity of a single-crystalline SiGe material in spatially defined regions as short as approximately 15 nm. Single-barrier thermal resistances between 2 and 4 x 10(-9) m(2) K W(-1) were attained, resulting in a room-temperature kappa down to about 0.9 W m(-1) K(-1), in multilayered structures with as little as five barriers. Such low thermal conductivity is compatible with a totally diffuse mismatch model for the barriers, and it is well below the amorphous limit. The results are in agreement with atomistic Green's function simulations.

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Authors: Pernot, G., Stoffel, M., Savic, I., Pezzoli, F., Chen, P., Savelli, G., Jacquot, A., Schumann, J., Denker, U., Mönch, I., Deneke, C., Schmidt, O. G., Rampnoux, J. M., Wang, S., Plissonnier, M., Rastelli, A., Dilhaire, S., & Mingo, N.
Affiliations: Centre National de la Recherche Scientifique (FR)
Leibniz Institute for Solid State and Materials Research (DE)
Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
Fraunhofer Institute for Physical Measurement Techniques (DE)
Max Planck Institute for Solid State Research (DE)
University of California, Santa Cruz (US)
Corresponding author: Rastelli, A.
Dilhaire, S.
Mingo, N.
ORCID: Pernot, G.
Stoffel, M.
Pezzoli, F.
Savelli, G.
Jacquot, A.
Schmidt, O. G.
Rampnoux, J. M.
Wang, S.
Rastelli, A.
Dilhaire, S.
Mingo, N.
Venue: Nature Materials
Publisher: Springer Science and Business Media LLC
Published: 2010-05-02
Volume: 9
Issue: 6
Pages: 491-495
ISSN: 1476-1122 (ISSN-L)
1476-4660
DOI: 10.1038/nmat2752
OpenAlex: W2017969431
Cited by: 375
References: 42
Citations by year: 2026: 4 · 2025: 11 · 2024: 19 · 2023: 11 · 2022: 21 · 2021: 18 · 2020: 29 · 2019: 20 · 2018: 28 · 2017: 31 · 2016: 34 · 2015: 31 · 2014: 25 · 2013: 31 · 2012: 31
FWCI: 14.62
Type: journal article
Language: en
Open access: green
hal.science
Licence: cc-by-nc-sa
www.springer.com/tdm (tdm)
www.springer.com/tdm (vor)
Locations: Nature Materials (publishedVersion)
PubMed (publishedVersion)
HAL (submittedVersion, cc-by-nc-sa)
Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft) (submittedVersion)
Oskar-Bordeaux (Universite de Bordeaux) (submittedVersion, cc-by-nc-sa)
Fraunhofer-Publica (Fraunhofer-Gesellschaft) (submittedVersion)
Funders: Agence Nationale de la Recherche (ANR-06-NANO-0020, ANR-06-NANO-0054, ANR-06-BLAN-0129)
Topics: Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
Physical Sciences › Engineering › Civil and Structural Engineering › Thermal Radiation and Cooling Technologies
Physical Sciences › Materials Science › Materials Chemistry › Advanced Thermoelectric Materials and Devices
Keywords: thermal conductivity control, phonon scattering, SiGe, silicon nanowires, nanostructuring, thermal resistance, diffuse mismatch model, low thermal conductivity

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Precise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers

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