Nanoscale thermal transport

Cahill, David G.; Ford, Wayne K.; Goodson, Kenneth E.; Mahan, Gerald D.; Majumdar, Arun; Maris, Humphrey J.; Merlin, Roberto; Phillpot, Simon R.

doi:10.1063/1.1524305

Cited by 2,825

The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.

Nanoscale thermal transport

Cahill, David G., Ford, Wayne K., Goodson, Kenneth E., Mahan, Gerald D., Majumdar, Arun, Maris, Humphrey J., Merlin, Roberto, Phillpot, Simon R.·2003·Journal of Applied Physics

DOI 10.1063/1.1524305

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Abstract

Rapid progress in the synthesis and processing of materials with structure on nanometer length scales has created a demand for greater scientific understanding of thermal transport in nanoscale devices, individual nanostructures, and nanostructured materials. This review emphasizes developments in experiment, theory, and computation that have occurred in the past ten years and summarizes the present status of the field. Interfaces between materials become increasingly important on small length scales. The thermal conductance of many solid–solid interfaces have been studied experimentally but the range of observed interface properties is much smaller than predicted by simple theory. Classical molecular dynamics simulations are emerging as a powerful tool for calculations of thermal conductance and phonon scattering, and may provide for a lively interplay of experiment and theory in the near term. Fundamental issues remain concerning the correct definitions of temperature in nonequilibrium nanoscale systems. Modern Si microelectronics are now firmly in the nanoscale regime—experiments have demonstrated that the close proximity of interfaces and the extremely small volume of heat dissipation strongly modifies thermal transport, thereby aggravating problems of thermal management. Microelectronic devices are too large to yield to atomic-level simulation in the foreseeable future and, therefore, calculations of thermal transport must rely on solutions of the Boltzmann transport equation; microscopic phonon scattering rates needed for predictive models are, even for Si, poorly known. Low-dimensional nanostructures, such as carbon nanotubes, are predicted to have novel transport properties; the first quantitative experiments of the thermal conductivity of nanotubes have recently been achieved using microfabricated measurement systems. Nanoscale porosity decreases the permittivity of amorphous dielectrics but porosity also strongly decreases the thermal conductivity. The promise of improved thermoelectric materials and problems of thermal management of optoelectronic devices have stimulated extensive studies of semiconductor superlattices; agreement between experiment and theory is generally poor. Advances in measurement methods, e.g., the 3ω method, time-domain thermoreflectance, sources of coherent phonons, microfabricated test structures, and the scanning thermal microscope, are enabling new capabilities for nanoscale thermal metrology.

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The 3ω voltage signal has information about thermal transport within the sample.
“This change in voltage at 3ω frequency (i.e. the third term in Eq. ( 23)) has the information about thermal transport within the sample [82].”
From Measurement Techniques for Thermal Conductivity and Interfacial Thermal Conductance of Bulk and Thin Film Materials (2016) · cites this paper as [82]
The Multilayers and superlattices section (page unavailable) says the 3ω method measures thermal conductivity in thin films, supporting the claim that the method yields information about sample thermal transport. Our copy does not explain that this information is carried specifically by a voltage signal at 3ω. (LLM, conf=0.76)
Experimental — accuracy not yet measured
Dames described the general case of thermal and electrical transfer functions framework.
“Dames also described the general case of thermal and electrical transfer functions framework [82].”
From Measurement Techniques for Thermal Conductivity and Interfacial Thermal Conductance of Bulk and Thin Film Materials (2016) · cites this paper as [82]

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Thermal Transport Measurements of Individual Multiwalled Nanotubes
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Self-citation
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Stoner, R. J., & Maris, H. J. (1993) · Physical Review B · doi:10.1103/physrevb.48.16373 · Cited by 646
Self-citation
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Capinski, W. S., Maris, H. J., Ruf, T., Cardona, M., Ploog, K., & Katzer, D. S. (1999) · Physical Review B · doi:10.1103/physrevb.59.8105 · Cited by 471
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Touzelbaev, M. N., Zhou, P., Venkatasubramanian, R., & Goodson, K. E. (2001) · Journal of Applied Physics · doi:10.1063/1.1374458 · Cited by 151
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Authors: Cahill, D. G., Ford, W. K., Goodson, K. E., Mahan, G. D., Majumdar, A., Maris, H. J., Merlin, R., & Phillpot, S. R.
Affiliations: Department of Material Science and Engineering and the Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801
Intel Corporation, 5200 NE Elam Young Parkway, Hillsboro, Orgeon 97124
Department of Mechanical Engineering, Stanford University, Palo Alto, California 94305
Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802
Department of Mechanical Engineering, University of California, Berkeley, California 94720
Department of Physics, Brown University, Providence, Rhode Island 02912
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
Venue: Journal of Applied Physics
Publisher: AIP Publishing
Published: 2003-01-15
Volume: 93
Issue: 2
Pages: 793-818
ISSN: 0021-8979
1089-7550
DOI: 10.1063/1.1524305
Cited by: 2,825
References: 4
Language: en

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