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Topological crystalline insulator states in Pb1−xSnxSe
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Topological insulators are a class of quantum materials in which time-reversal symmetry, relativistic effects and an inverted band structure result in the occurrence of electronic metallic states on the surfaces of insulating bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical results have suggested the existence of topological crystalline insulators (TCIs), a class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in ensuring topological protection. In this study we show that the narrow-gap semiconductor Pb(1-x)Sn(x)Se is a TCI for x = 0.23. Temperature-dependent angle-resolved photoelectron spectroscopy demonstrates that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a TCI. These experimental findings add a new class to the family of topological insulators, and we anticipate that they will lead to a considerable body of further research as well as detailed studies of topological phase transitions.
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“The current ARPES works 29,30 have not demonstrated resolution better than 5 meV, and thus fitting of the energy-momentum distribution curves lacks the resolving power to exclude gap values o5 meV (see Supplementary Fig. S10 and Supplementary Discussion).”
From Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe (2012) · cites this paper as [29]
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“Therefore, although the existence of surface states correlated with band inversion transition is established here in our work, their gapped or gaplessness nature requires surface transport experiments on samples with improved quality, which is currently not possible 29 .”
From Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe (2012) · cites this paper as [29]
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“cause it is the natural cleavage plane of TCI crystals [28, 34].”
BackgroundSurface hole accumulation and Fermi level stabilization energy in SnTe
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Metadata
- Authors
- Dziawa, P., Kowalski, B. J., Dybko, K., Buczko, R., Szczerbakow, A., Szot, M., Łusakowska, E., Balasubramanian, T., Wojek, B. M., Berntsen, M. H., Tjernberg, O., & Story, T.
- Affiliations
- Institute of Physics (PL)
- Lund University (SE)
- KTH Royal Institute of Technology (SE)
- Corresponding author
- Tjernberg, O.
- Story, T.
- ORCID
- Venue
- Nature Materials
- Published
- 2012-09-30
- Volume
- 11
- Issue
- 12
- Pages
- 1023-1027
- ISSN
- 1476-1122 (ISSN-L)
- 1476-4660
- OpenAlex
- W1997811253
- Semantic Scholar
- e2378ddb7a491f990b6be147ab709de5256c2e1a
- Cited by
- 820
- References
- 32
- Citations by year
- 2026: 21 · 2025: 50 · 2024: 37 · 2023: 39 · 2022: 53 · 2021: 61 · 2020: 66 · 2019: 72 · 2018: 88 · 2017: 75 · 2016: 67 · 2015: 79 · 2014: 72 · 2013: 33 · 2012: 7
- FWCI
- 31.61
- Type
- journal article
- Language
- en
- Open access
- green
- arxiv.org
- Locations
- Nature Materials (publishedVersion)
- PubMed (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- Lund University Publications (Lund University) (submittedVersion)
- arXiv (Cornell University)
- Funders
- European Commission
- Knut och Alice Wallenbergs Stiftelse
- Vetenskapsrådet
- European Regional Development Fund
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Topological Materials and Phenomena
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Advanced Condensed Matter Physics
- Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
- Keywords
- topological crystalline insulators, Pb1-xSnxSe, crystal symmetry, topological phase transition, narrow-gap semiconductors, topological protection, surface states, angle-resolved photoemission
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