The DOI matches its Crossref record; 10 of the 10 references it cites were found in a registry or an index.
Negative capacitance in a ferroelectric capacitor
Abstract
The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.
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Citations
Cites
Principles and Applications of Ferroelectrics and Related Materials
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Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
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Self-citationSwitching Time in Ferroelectric BaTiO3 and Its Dependence on Crystal Thickness
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Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature
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Nanosecond switching of thin ferroelectric films
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Room-Temperature Negative Capacitance in a Ferroelectric–Dielectric Superlattice Heterostructure
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Self-citationVery large dielectric response of thin ferroelectric films with the dead layers
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Cited by
Thin-film ferroelectric materials and their applications
Martin, L. W., & Rappe, A. M. (2016) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.87 · Cited by 1,071
A comprehensive review on emerging artificial neuromorphic devices
Zhu, J., Zhang, T., Yang, Y., & Huang, R. (2020) · Applied Physics Reviews · doi:10.1063/1.5118217 · Cited by 758
Unveiling the double-well energy landscape in a ferroelectric layer
Hoffmann, M., Fengler, F. P. G., Herzig, M., Mittmann, T., Max, B., Schroeder, U., Negrea, R., Lucian, P., Slesazeck, S., & Mikolajick, T. (2019) · Nature · doi:10.1038/s41586-018-0854-z · Cited by 408
Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors
Mulaosmanovic, H., Ocker, J., Müller, S., Schroeder, U., Müller, J., Polakowski, P., Flachowsky, S., van Bentum, R., Mikolajick, T., & Slesazeck, S. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.6b13866 · Cited by 344
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Metadata
- Authors
- Khan, A. I., Chatterjee, K., Wang, B., Drapcho, S., You, L., Serrao, C., Bakaul, S. R., Ramesh, R., & Salahuddin, S.
- Venue
- Nature Materials
- Published
- 2014-12-15
- Volume
- 14
- Issue
- 2
- Pages
- 182-186
- ISSN
- 1476-1122 (ISSN-L)
- 1476-4660
- OpenAlex
- W2013468429
- Cited by
- 781
- References
- 10
- FWCI
- 22.99
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Negative capacitance in a ferroelectric capacitor. https://app.cochat.ai/papers/10.1038/nmat4148
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- Khan, A. I., Chatterjee, K., Wang, B., Drapcho, S., You, L., Serrao, C., Bakaul, S. R., Ramesh, R., & Salahuddin, S. (2015). Negative capacitance in a ferroelectric capacitor. Nature Materials. https://doi.org/10.1038/nmat4148
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
