The DOI matches its Crossref record; 22 of the 22 references it cites were found in a registry or an index.
Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors
Abstract
The recent discovery of ferroelectricity in thin hafnium oxide films has led to a resurgence of interest in ferroelectric memory devices. Although both experimental and theoretical studies on this new ferroelectric system have been undertaken, much remains to be unveiled regarding its domain landscape and switching kinetics. Here we demonstrate that the switching of single domains can be directly observed in ultrascaled ferroelectric field effect transistors. Using models of ferroelectric domain nucleation we explain the time, field and temperature dependence of polarization reversal. A simple stochastic model is proposed as well, relating nucleation processes to the observed statistical switching behavior. Our results suggest novel opportunities for hafnium oxide based ferroelectrics in nonvolatile memory devices.
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Citations
Cites
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Self-citationUse of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
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Self-citationPhysical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
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Self-citationNegative capacitance in a ferroelectric capacitor
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Self-citationFerroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures
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Zhu, J., Zhang, T., Yang, Y., & Huang, R. (2020) · Applied Physics Reviews · doi:10.1063/1.5118217 · Cited by 758
The fundamentals and applications of ferroelectric HfO2
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Self-citationReview and perspective on ferroelectric HfO2-based thin films for memory applications
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Self-citationScale-free ferroelectricity induced by flat phonon bands in HfO 2
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Ferroelectric ternary content-addressable memory for one-shot learning
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Metadata
- Authors
- Mulaosmanovic, H., Ocker, J., Müller, S., Schroeder, U., Müller, J., Polakowski, P., Flachowsky, S., van Bentum, R., Mikolajick, T., & Slesazeck, S.
- Venue
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Published
- 2017-01-24
- Volume
- 9
- Issue
- 4
- Pages
- 3792-3798
- ISSN
- 1944-8244 (ISSN-L)
- 1944-8252
- OpenAlex
- W2568885332
- Cited by
- 344
- References
- 22
- FWCI
- 12.75
- Type
- journal article
- Language
- en
- Open access
- closed
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- Mulaosmanovic, H., Ocker, J., Müller, S., Schroeder, U., Müller, J., Polakowski, P., Flachowsky, S., van Bentum, R., Mikolajick, T., & Slesazeck, S. (2017). Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.6b13866
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