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In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor
Abstract
Reduced power dissipation relative to the field-effect transistor (FET) is a key attribute that should be possessed by any device that has a chance of supplanting the FET as the ubiquitous building block for complex digital logic. We outline the possible physical approaches to achieving this attribute, and illustrate these approaches by citing current exploratory device research. We assess the value of the key exploratory research objectives of the semiconductor industry-sponsored Nanoelectronics Research Initiative (NRI) in the light of this pressing need to reduce dissipation in future digital logic devices.
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Cites
The thermodynamics of computation—a review
Bennett, C. H. (1982) · International Journal of Theoretical Physics · doi:10.1007/bf02084158 · Cited by 2,006
Cited by
Nanoscale thermal transport. II. 2003–2012
Cahill, D. G., Braun, P. V., Chen, G., Clarke, D. R., Fan, S., Goodson, K. E., Keblinski, P., King, W. P., Mahan, G. D., Majumdar, A., et al. (2014) · Applied Physics Reviews · doi:10.1063/1.4832615 · Cited by 1,763
Negative capacitance in a ferroelectric capacitor
Khan, A. I., Chatterjee, K., Wang, B., Drapcho, S., You, L., Serrao, C., Bakaul, S. R., Ramesh, R., & Salahuddin, S. (2015) · Nature Materials · doi:10.1038/nmat4148 · Cited by 781
Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
Sangwan, V. K., Jariwala, D., Kim, I. S., Chen, K.-S., Marks, T. J., Lauhon, L. J., & Hersam, M. C. (2015) · Nature Nanotechnology · doi:10.1038/nnano.2015.56 · Cited by 709
Metadata
- Authors
- Theis, T. N., & Solomon, P. M.
- Venue
- Proceedings of the IEEE
- Published
- 2010-12
- Volume
- 98
- Issue
- 12
- Pages
- 2005-2014
- ISSN
- 0018-9219 (ISSN-L)
- 1558-2256
- OpenAlex
- W2114847300
- Cited by
- 196
- References
- 1
- FWCI
- 4.24
- Type
- journal article
- Language
- en
- Open access
- closed
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- Theis, T. N., & Solomon, P. M. (2010). In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor. Proceedings of the IEEE. https://doi.org/10.1109/jproc.2010.2066531
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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