Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

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21. An overview of critical applications of resistive random access memory
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23. Modulating metallic conductive filaments via bilayer oxides in resistive switching memory
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25. Monolayer MoS2/WO3 Heterostructures with Sulfur Anion Reservoirs as Electronic Synapses for Neuromorphic Computing
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27. Silk Protein Based Volatile Threshold Switching Memristors for Neuromorphic Computing
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29. Memristive, Spintronic, and 2D‐Materials‐Based Devices to Improve and Complement Computing Hardware
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30. Back‐End‐of‐Line SiC‐Based Memristor for Resistive Memory and Artificial Synapse
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31. Bio-plausible memristive neural components towards hardware implementation of brain-like intelligence
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32. Advances in Metal Halide Perovskite Memristors: A Review from a Co‐Design Perspective
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33. Memristive Ion Dynamics to Enable Biorealistic Computing
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35. Controlling the Neuromorphic Behavior of Organic Electrochemical Transistors by Blending Mixed and Ion Conductors
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36. Ion‐Gated Transistor: An Enabler for Sensing and Computing Integration
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37. A Digital−Analog Bimodal Memristor Based on CsPbBr 3 for Tactile Sensory Neuromorphic Computing
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38. Spontaneous Threshold Lowering Neuron using Second‐Order Diffusive Memristor for Self‐Adaptive Spatial Attention
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39. Bulk‐Switching Memristor‐Based Compute‐In‐Memory Module for Deep Neural Network Training
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40. Leveraging volatile memristors in neuromorphic computing: from materials to system implementation
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41. SiO2 based conductive bridging random access memory
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42. Electrochemical and Chemical Insertion for Energy Transformation and Switching
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43. Synaptic Characteristics of an Ultrathin Hexagonal Boron Nitride (h‐BN) Diffusive Memristor
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54. Recent Progress in Neuromorphic Computing from Memristive Devices to Neuromorphic Chips
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55. Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109
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58. Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part II: Mechanism and Modeling
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59. Neuromorphic computing with memristive devices
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60. Deep Insight into Steep‐Slope Threshold Switching with Record Selectivity (>4 × 1010) Controlled by Metal‐Ion Movement through Vacancy‐Induced‐Percolation Path: Quantum‐Level Control of Hybrid‐Filament
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61. Hidden extreme multistability and its control with selection of a desired attractor in a non-autonomous Hopfield neuron
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62. A single neuron model with memristive synaptic weight
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64. Protons: Critical Species for Resistive Switching in Interface‐Type Memristors
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65. Synaptic Properties of Geopolymer Memristors: Synaptic Plasticity, Spike-Rate-Dependent Plasticity, and Spike-Timing-Dependent Plasticity
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69. Resistive switching performance improvement of InGaZnO-based memory device by nitrogen plasma treatment
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71. Controlled Growth of Fine Multifilaments in Polymer-Based Memristive Devices Via the Conduction Control
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72. Truly Electroforming‐Free Memristor Based on TiO2‐CoO Phase‐Separated Oxides with Extremely High Uniformity and Low Power Consumption
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