Memristive devices for computing

Cited by (1,007)

Items 501–600 of 1,007

1. An electronic silicon-based memristor with a high switching uniformity
   Yang Lu, Ana María Alvarez, Chung-Ho Kao, J.S. Bow, San‐Yuan Chen, I‐Wei Chen · 2019 · Nature Electronics
2. Physical Model for the Current–Voltage Hysteresis and Impedance of Halide Perovskite Memristors
   Mariana Berruet, José Carlos Pérez‐Martínez, Beatriz Romero, Cedric Gonzales, Abdullah Mohammed Al-Mayouf, Antonio Guerrero, Juan Bisquert · 2022 · ACS Energy Letters
3. Roadmap for unconventional computing with nanotechnology
   Giovanni Finocchio, Jean Anne C. Incorvia, Joseph S. Friedman, Yang Qu, Anna Giordano, Julie Grollier, Hyunsoo Yang, Florin Ciubotaru, Andrii V. Chumak, Azad Naeemi et al. · 2024 · Nano Futures
4. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications
   Rajwali Khan, Naveed Ur Rehman, Shahid Iqbal, Sherzod Shukhratovich Abdullaev, Haila M. Aldosari · 2023 · ACS Applied Electronic Materials
5. Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant
   Muhammad Ismail, Ejaz Ahmed, Anwar Manzoor Rana, Fayyaz Ahmad Hussain, Ijaz Talib, Muhammad Younus Nadeem, Debashis Panda, Nazar Abbas Shah · 2016 · ACS Applied Materials & Interfaces
6. Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism
   Somsubhra Chakrabarti, Sreekanth Ginnaram, Surajit Jana, Zong-Yi Wu, Kanishk Singh, Anisha Roy, Pankaj Kumar, Siddheswar Maikap, Jian-Tai Timothy Qiu, Hsin-Ming Cheng et al. · 2017 · Scientific Reports
7. Mechanisms for Enhanced State Retention and Stability in Redox‐Gated Organic Neuromorphic Devices
   Scott Tom Keene, Armantas Melianas, Yoeri van de Burgt, Alberto Salleo · 2018 · Advanced Electronic Materials
8. What Will Come After V‐NAND—Vertical Resistive Switching Memory?
   Kyung Jean Yoon, Yumin Kim, Cheol Seong Hwang · 2019 · Advanced Electronic Materials
9. Topotactic Phase Transition Driving Memristive Behavior
   Venkata Raveendra Nallagatla, Thomas Heisig, Christoph Baeumer, Vitaliy Feyer, Matteo Jugovac, Giovanni Zamborlini, Claus Michael Schneider, Rainer M. Waser, Miyoung Kim, C. U. Jung et al. · 2019 · Advanced Materials
10. Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices
    Robin Khosla, Satinder Kumar Sharma · 2021 · ACS Applied Electronic Materials
11. Modeling affections with memristor-based associative memory neural networks
    Xiaofang Hu, Shukai Duan, Guanrong Chen, Ling Chen · 2016 · Neurocomputing
12. Homogeneous Spiking Neuromorphic System for Real-World Pattern Recognition
    Wu Xin, Vishal Saxena, Kehan Zhu · 2015 · IEEE Journal on Emerging and Selected Topics in Circuits and Systems
13. Oxygen Vacancy Creation, Drift, and Aggregation in TiO2‐Based Resistive Switches at Low Temperature and Voltage
    Jonghan Kwon, Abhishek A. Sharma, James A. Bain, Yoosuf N. Picard, Marek Skowroński · 2015 · Advanced Functional Materials
14. A neuromorphic systems approach to in-memory computing with non-ideal memristive devices: from mitigation to exploitation
    Melika Payvand, Manu V Nair, Lorenz K. Müller, Giacomo Indiveri · 2018 · Faraday Discussions
15. A provable key destruction scheme based on memristive crossbar arrays
    Hao Jiang, Can Li, Rui Zhang, Peng Yan, Peng Lin, Yunning Li, J. Joshua Yang, Daniel E. Holcomb, Qiangfei Xia · 2018 · Nature Electronics
16. Two-Dimensional Unipolar Memristors with Logic and Memory Functions
    Lei Yin, Ruiqing Cheng, Zhenxing Wang, Feng Wang, Marshet Getaye Sendeku, Yao Wen, Xueying Zhan, Jun He · 2020 · Nano Letters
17. Ferroelectric polymers for neuromorphic computing
    Xuezhong Niu, Bobo Tian, Qiuxiang Zhu, Brahim Dkhil, Chun‐Gang Duan · 2022 · Applied Physics Reviews
18. Interfacial versus filamentary resistive switching in TiO2 and HfO2 devices
    Gilbert Sassine, Selina La Barbera, Nabil Najjari, Marie Minvielle, Catherine Dubourdieu, Fabien Alibart · 2016 · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
19. A learnable parallel processing architecture towards unity of memory and computing
    Haitong Li, Bin Gao, Z. Chen, Yu Zhao, Peng Cheng Huang, H. Ye, Liming Liu, X. Liu, Jinfeng Kang · 2015 · Scientific Reports
20. Enhancing the Matrix Addressing of Flexible Sensory Arrays by a Highly Nonlinear Threshold Switch
    Ming Wang, Wei Juan Wang, Wan Ru Leow, Changjin Wan, Geng Chen, Yi Zeng, Jiancan Yu, Yaqing Liu, Pingqiang Cai, Hong Wang et al. · 2018 · Advanced Materials
21. Reliable organic memristors for neuromorphic computing by predefining a localized ion-migration path in crosslinkable polymer
    Hea‐Lim Park, Min‐Hwi Kim, Min‐Hoi Kim, Sin‐Hyung Lee · 2020 · Nanoscale
22. Strain engineering of vertical molybdenum ditelluride phase-change memristors
    Wenhui Hou, Ahmad Azizimanesh, Aditya Dey, Yufeng Yang, Wuxiucheng Wang, Chen Shao, Hui Xiang Wu, Hesam Askari, Sobhit Singh, Stephen M. Wu · 2023 · Nature Electronics
23. Logic operations in memory using a memristive Akers array
    Yifat Levy, Jehoshua Bruck, Yuval Cassuto, Eby G. Friedman, Avinoam Kolodny, Eitan Yaakobi, Shahar Kvatinsky · 2014 · Microelectronics Journal
24. Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor
    Chaochao Zhang, Jie Shang, Wuhong Xue, Hongwei Tan, Liang Pan, Xi Yang, Shanshan Guo, Jian Hao, Gang Liu, Run‐Wei Li · 2016 · Chemical Communications
25. Mott-transition-based RRAM
    Yue Wang, Kyung-Mun Kang, Minjae Kim, Hong‐Sub Lee, Rainer M. Waser, Dirk J. Wouters, Regina Dittmann, J. Joshua Yang, Hyung‐Ho Park · 2019 · Materials Today
26. DUAL: Acceleration of Clustering Algorithms using Digital-based Processing In-Memory
    Mohsen Imani, Saikishan Pampana, Saransh Gupta, Minxuan Zhou, Yeseong Kim, Tajana Rosing · 2020 · IEEE/ACM International Symposium on Microarchitecture (MICRO)
27. High‐Throughput Screening for Phase‐Change Memory Materials
    Yuting Liu, Xianbin Li, Hui Zheng, Nian‐Ke Chen, Xuepeng Wang, Xu‐Lin Zhang, Hong‐Bo Sun, Shengbai Zhang · 2021 · Advanced Functional Materials
28. One Transistor One Electrolyte‐Gated Transistor Based Spiking Neural Network for Power‐Efficient Neuromorphic Computing System
    Yue Li, Zihao Xuan, Jikai Lu, Zhongrui Wang, Xumeng Zhang, Zuheng Wu, Yongzhou Wang, Han Xu, Chunmeng Dou, Yi Kang et al. · 2021 · Advanced Functional Materials
29. Integrated Memory Devices Based on 2D Materials
    Fei Xue, Chenhui Zhang, Yinchang Ma, Yan Wen, Xin He, Bin Yu, Xixiang Zhang · 2022 · Advanced Materials
30. Structure of molten titanium dioxide
    Oliver L. G. Alderman, Lawrie Basil Skinner, Chris J. Benmore, A. Tamalonis, J. K. Richard Weber · 2014 · Physical Review B
31. Emulation of synaptic metaplasticity in memristors
    Xiaojian Zhu, Chao Du, YeonJoo Jeong, Wei Dong Lu · 2016 · Nanoscale
32. A caloritronics-based Mott neuristor
    Javier del Valle, Pavel Salev, Yoav Kalcheim, Iván K. Schuller · 2020 · Scientific Reports
33. Memristive Devices and Networks for Brain‐Inspired Computing
    Teng Zhang, Yang Ke, Xiaoyan Xu, Yimao Cai, Yuchao Yang, Ru Huang · 2019 · physica status solidi (RRL) - Rapid Research Letters
34. Stimuli‐Enabled Artificial Synapses for Neuromorphic Perception: Progress and Perspectives
    Xuan Pan, Tengyu Jin, Jing Li Gao, Cheng Han, Yumeng Shi, Wei Chen · 2020 · Small
35. Fast boolean logic mapped on memristor crossbar
    Lei Xie, Hoang Anh Du Nguyen, Mottaqiallah Taouil, Koen Bertels · 2015 · IEEE International Conference on Computer Design: VLSI in Computers and Processors (ICCD)
36. Observing Oxygen Vacancy Driven Electroforming in Pt–TiO2–Pt Device via Strong Metal Support Interaction
    Moon Hyung Jang, Rahul Agarwal, Pavan Nukala, Dooho Choi, Alan T. Charlie Johnson, I‐Wei Chen, Ritesh Agarwal · 2016 · Nano Letters
37. Atomic View of Filament Growth in Electrochemical Memristive Elements
    Hangbing Lv, Xiaoxin Xu, Pengxiao Sun, Hongtao Liu, Qing Luo, Qi Liu, Writam Banerjee, Haitao Sun, Shibing Long, Ling Li et al. · 2015 · Scientific Reports
38. Electrochemical Tantalum Oxide for Resistive Switching Memories
    Andrea Zaffora, Deok‐Yong Cho, Kug‐Seung Lee, Francesco Di Quarto, Rainer M. Waser, Monica Santamaria, Ilia Valov · 2017 · Advanced Materials
39. Electric-field control of spin accumulation direction for spin-orbit torques
    Rahul Mishra, Farzad Mahfouzi, Dushyant Kumar, Kaiming Cai, Mengji Chen, Xuepeng Qiu, Nicholas Kioussis, Hyunsoo Yang · 2019 · Nature Communications
40. Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems
    M. Ismail, H. Abbas, Changhwan Choi, Sungjun Kim · 2020 · Applied Surface Science
41. Artificial Synapse Based on a 2D-SnO2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing.
    Chi-Hsin Huang, H. Chang, Tzu-Yi Yang, Yi-Chung Wang, Y. Chueh, K. Nomura · 2021 · ACS Applied Materials and Interfaces
42. 2D materials: increscent quantum flatland with immense potential for applications
    Pranay Ranjan, Snehraj Gaur, Himanshu Yadav, Ajay B. Urgunde, Vikas Singh, Avit Patel, Kusum Vishwakarma, Deepak Kalirawana, Ritu Gupta, Prashant Kumar · 2022 · Nano Convergence
43. HfO2-based resistive switching memory devices for neuromorphic computing
    S. Brivio, S. Spiga, D. Ielmini · 2022 · Neuromorph. Comput. Eng.
44. ECRAM Materials, Devices, Circuits and Architectures: A Perspective
    Albert Alec Talin, Yiyang Li, D. Robinson, Elliot James Fuller, Suhas Kumar · 2022 · Advanced Materials
45. Real-time finger motion recognition using skin-conformable electronics
    Cho, Haein, Lee, Inho, Jang, Jingon, Kim, Jae-Hyun, Lee, Hanbee, Park, Sungjun, Wang, Gunuk · 2023 · Nature Electronics
46. Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory
    Chung-Wei Hsu, Yufen Wang, Chia-Chen Wan, I‐Ting Wang, Chun-Tse Chou, Wei-Li Lai, Yao‐Jen Lee, Tuo‐Hung Hou · 2014 · Nanotechnology
47. Performance‐Enhancing Selector via Symmetrical Multilayer Design
    Yiming Sun, Xiaolong Zhao, Cheng Song, Kun Xu, Yue Xi, Jun Yin, Ziyu Wang, Xiaofeng Zhou, Xianzhe Chen, Guoyi Shi et al. · 2019 · Advanced Functional Materials
48. Memristors for Hardware Security Applications
    Yachuan Pang, Bin Gao, Bohan Lin, He Qian, Huaqiang Wu · 2019 · Advanced Electronic Materials
49. Design of a Controllable Redox‐Diffusive Threshold Switching Memristor
    Yiming Sun, Cheng Song, Siqi Yin, Leilei Qiao, Qin Wan, Rui Wang, Fei Zeng, Feng Pan · 2020 · Advanced Electronic Materials
50. Two-dimensional heterostructures and their device applications: progress, challenges and opportunities—review
    Songqing Zhang, Junliang Liu, Maxwell Merle Kirchner, Han Wang, Yongling Ren, Wen Lei · 2021 · Journal of Physics D Applied Physics
51. Three‐Dimensional Reconstruction of Conductive Filaments in HfOx‐Based Memristor
    Tiantian Wei, Yuyao Lu, Fan Zhang, Jianshi Tang, Bin Gao, Pu Yu, He Qian, Huaqiang Wu · 2022 · Advanced Materials
52. Biomimetic optoelectronics with nanomaterials for artificial vision
    Zhenghao Long, Yu Zhou, Yucheng Ding, Xiao Qiu, Swapnadeep Poddar, Zhiyong Fan · 2024 · Nature Reviews Materials
53. Novel Electroforming‐Free Nanoscaffold Memristor with Very High Uniformity, Tunability, and Density
    Shinbuhm Lee, Abhijeet L. Sangle, Ping Lu, Aiping Chen, Wenrui Zhang, Jae Sung Lee, Haiyan Wang, Quanxi X. Jia, Judith L. MacManus‐Driscoll · 2014 · Advanced Materials
54. Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory
    Susant Kumar Acharya, Venkata Raveendra Nallagatla, Octolia Togibasa, Bo W. Lee, Chunli Liu, Chang Uk Jung, Bae Ho Park, Ji‐Yong Park, Yunae Cho, Dongwook Kim et al. · 2016 · ACS Applied Materials & Interfaces
55. Multifunctional, self-assembled oxide nanocomposite thin films and devices
    Wenrui Zhang, R. Ramesh, Judith L. MacManus‐Driscoll, Haiyan Wang · 2015 · MRS Bulletin
56. Flexible Memristors Based on Single-Crystalline Ferroelectric Tunnel Junctions
    Zheng‐Dong Luo, Jonathan J. P. Peters, Ana M. Sánchez, Marin Alexe · 2019 · ACS Applied Materials & Interfaces
57. Phase-change materials in electronics and photonics
    Wei Zhang, Riccardo Mazzarello, Evan Ma · 2019 · MRS Bulletin
58. Asymmetric Metal/α-In 2 Se 3 /Si Crossbar Ferroelectric Semiconductor Junction
    Mengwei Si, Zhuocheng Zhang, Sou-Chi Chang, Nazila Haratipour, Dongqi Zheng, Junkang Li, Uygar E. Avci, Peide D. Ye · 2021 · ACS Nano
59. A Scalable In-Memory Logic Synthesis Approach Using Memristor Crossbar
    Rahul Gharpinde, Phrangboklang Lyngton Thangkhiew, Kamalika Datta, Indranil Sengupta · 2017 · IEEE Transactions on Very Large Scale Integration (VLSI) Systems
60. Improving Unipolar Resistive Switching Uniformity with Cone-Shaped Conducting Filaments and Its Logic-In-Memory Application
    Shuang Gao, Gang Liu, Qi Chen, Wuhong Xue, Huali Yang, Jie Shang, Bin Chen, Fei Zeng, Cheng Song, Feng Pan et al. · 2018 · ACS Applied Materials & Interfaces
61. Quantum memristors
    Paul E. Pfeiffer, I. L. Egusquiza, Massimiliano Di Ventra, Mikel Sanz, E. Solano · 2016 · Scientific Reports
62. Artificial Synaptic Emulators Based on MoS2 Flash Memory Devices with Double Floating Gates
    Sum-Gyun Yi, Myung Uk Park, Sung Hyun Kim, Chang Jun Lee, Junyoung Kwon, Gwan‐Hyoung Lee, Kyung‐Hwa Yoo · 2018 · ACS Applied Materials & Interfaces
63. Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
    Stefan Petzold, Alexander Zintler, Robert Eilhardt, Eszter Piros, Nico Kaiser, Sankaramangalam Ulhas Sharath, Tobias Vogel, Márton Major, Keith Patrick McKenna, Leopoldo Molina‐Luna et al. · 2019 · Advanced Electronic Materials
64. Fullerene-Based Switching Molecular Diodes Controlled by Oriented External Electric Fields
    Adam Jaroš, Esmaeil Farajpour Bonab, Michal Straka, Cina Foroutan‐Nejad · 2019 · Journal of the American Chemical Society
65. Integration and Co-design of Memristive Devices and Algorithms for Artificial Intelligence
    Wei Juan Wang, Wenhao Song, Peng Yao, Yang Li, Joseph Van Nostrand, Qinru Qiu, Daniele Ielmini, J. Joshua Yang · 2020 · iScience
66. Atomic switch networks—nanoarchitectonic design of a complex system for natural computing
    Eleanor C. Demis, Renato Aguilera, Henry O. Sillin, Kelsey S. Scharnhorst, Eric J. Sandouk, Masakazu Aono, Adam Z. Stieg, James Kazimierz Gimzewski · 2015 · Nanotechnology
67. Low-Barrier Nanomagnets as p-Bits for Spin Logic
    Rafatul Faria, Kerem Yunus Camsari, Supriyo Datta · 2017 · IEEE Magnetics Letters
68. Impact of the Counter‐Electrode Material on Redox Processes in Resistive Switching Memories
    Stefan Tappertzhofen, Rainer M. Waser, Ilia Valov · 2014 · ChemElectroChem
69. Memristor emulator with spike-timing-dependent-plasticity
    Yunus Babacan, Fırat Kaçar · 2016 · AEU - International Journal of Electronics and Communications
70. Efficient Implementation of Boolean and Full-Adder Functions With 1T1R RRAMs for Beyond Von Neumann In-Memory Computing
    Zhuorui Wang, Yi Li, Yu‐Ting Su, Yaxiong Zhou, Long Cheng, Ting‐Chang Chang, Kan‐Hao Xue, Simon M. Sze, Xiangshui Miao · 2018 · IEEE Transactions on Electron Devices
71. Spoken Digit Classification by In-Materio Reservoir Computing With Neuromorphic Atomic Switch Networks
    Sam Lilak, Walt Woods, Kelsey S. Scharnhorst, Christopher S. Dunham, Christof Teuscher, Adam Z. Stieg, James Kazimierz Gimzewski · 2021 · Frontiers in Nanotechnology
72. Electronics and Optoelectronics Based on Tellurium
    Jiajia Zha, Dechen Dong, Haoxin Huang, Yunpeng Xia, Jingyi Tong, Handa Liu, Hau Ping Chan, Johnny Chung Yin Ho, Chunsong Zhao, Yang Chai et al. · 2024 · Advanced Materials
73. Complementary resistive switching behaviors evolved from bipolar TiN/HfO2/Pt device
    Xinman Chen, Wei Hui Hu, Yan Li, Shuxiang Wu, Dinghua Bao · 2016 · Applied Physics Letters
74. Highly improved performance in Zr 0.5 Hf 0.5 O 2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory
    Xiaobing Yan, Lei Zhang, Yongqiang Yang, Zhenyu Zhou, Jianhui Zhao, Yuanyuan Zhang, Qi Liu, Jingsheng Chen · 2017 · Journal of Materials Chemistry C
75. Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications
    Daniele Ielmini, Valerio Milo · 2017 · Journal of Computational Electronics
76. A Family of Stateful Memristor Gates for Complete Cascading Logic
    Kyung Min Kim, Richard Stanley Williams · 2019 · IEEE Transactions on Circuits and Systems I Regular Papers
77. Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing
    Xueying Zhang, Wenlong Cai, Mengxing Wang, Biao Pan, Kaihua Cao, Maosen Guo, Tianrui Zhang, Houyi Cheng, Shaoxin Li, Daoqian Zhu et al. · 2021 · Advanced Science
78. Recharged Catalyst with Memristive Nitrogen Reduction Activity through Learning Networks of Spiking Neurons
    Gang Zhou, Tinghui Li, Rong Huang, Peifang Wang, Bin Hu, Hao Li, Lizhe Liu, Yan Sun · 2021 · Journal of the American Chemical Society
79. Ferroelectric Domain Wall Injection
    Jonathan R. Whyte, Raymond G. P. McQuaid, Pankaj Kumar Sharma, Carlota Canalias, James Floyd Scott, Alexei L. Gruverman, J. M. Gregg · 2013 · Advanced Materials
80. Crossbar-Based Memristive Logic-in-Memory Architecture
    Georgios Papandroulidakis, Ioannis Vourkas, A. C. Abusleme Hoffman, Georgios Ch. Sirakoulis, Antonio Rubio · 2017 · IEEE Transactions on Nanotechnology
81. Accelerated Ionic Motion in Amorphous Memristor Oxides for Nonvolatile Memories and Neuromorphic Computing
    Rafael Schmitt, Markus Kubicek, Eva Sediva, Morgan Trassin, Mads Christof Weber, Antonella M. Rossi, Herbert Hutter, J. Kreisel, M. Fiebig, Jennifer L. M. Rupp · 2018 · Advanced Functional Materials
82. Stretchable organic memory: toward learnable and digitized stretchable electronic applications
    Ying‐Chih Lai, Yi-Chuan Huang, Tai-Yuan Lin, Yi-Xian Wang, Chun-Yu Chang, Yaoxuan Li, Tzu-Yao Lin, Bo‐Wei Ye, Ya‐Ping Hsieh, Wei‐Fang Su et al. · 2014 · NPG Asia Materials
83. A Microdot Multilayer Oxide Device: Let Us Tune the Strain-Ionic Transport Interaction
    Sebastian Schweiger, Markus Kubicek, Felix Messerschmitt, Christoph Murer, Jennifer L. M. Rupp · 2014 · ACS Nano
84. Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides
    K. Fleck, Camilla La Torre, Nabeel Aslam, Susanne Hoffmann‐Eifert, U. Böttger, Stephan Menzel · 2016 · Physical Review Applied
85. Reconfigurable Memristive Device Technologies
    Arthur H. Edwards, Hugh Barnaby, Kristy A. Campbell, Michael N. Kozicki, Wei Liu, Matthew J. Marinella · 2015 · Proceedings of the IEEE
86. Modulation of Synaptic Plasticity Mimicked in Al Nanoparticle‐Embedded IGZO Synaptic Transistor
    Jeehoon Kim, Younghun Kim, Ojun Kwon, Taehyeon Kim, Se‐Young Oh, Soeun Jin, Woojin Park, Jung‐Dae Kwon, Seungwoo Hong, Chang‐Sik Lee et al. · 2020 · Advanced Electronic Materials
87. Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems
    Chandreswar Mahata, Changmin Lee, Youngseo An, Min‐Hwi Kim, Suhyun Bang, Chae Soo Kim, Jiho Ryu, Sungjun Kim, Hyoungsub Kim, Byung‐Gook Park · 2020 · Journal of Alloys and Compounds
88. Enhanced superconductivity in TiO epitaxial thin films
    Chao Zhang, Fei-Xiang Hao, Guanyin Gao, Xiang Liu, Chao Ma, Yue Lin, Yuewei Yin, Xiaoguang Li · 2017 · npj Quantum Materials
89. Artificial synapses emulated through a light mediated organic–inorganic hybrid transistor
    Jingyu Mao, Liang Zie Hu, Shirui Zhang, Yi Ren, Jia‐Qin Yang, Li Zhou, Y. J. Zeng, Ye Zhou, Su‐Ting Han · 2018 · Journal of Materials Chemistry C
90. Intrinsically Conductive Microbial Nanowires for 'Green' Electronics with Novel Functions.
    D. Lovley, Jun Yao · 2021 · Trends in Biotechnology
91. Mimicking biological synapses with a-HfSiOx-based memristor: implications for artificial intelligence and memory applications
    Muhammad Ismail, Maria Rasheed, Chandreswar Mahata, Myounggon Kang, Sungjun Kim · 2023 · Nano Convergence
92. Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory
    Umesh Chand, Chun-Yang Huang, Jheng‐Hong Jieng, Wen-Yueh Jang, Chen-Hsi Lin, Tseung‐Yuen Tseng · 2015 · Applied Physics Letters
93. Quantum Memristors with Superconducting Circuits
    Juha Salmilehto, Frank Deppe, Massimiliano Di Ventra, Mikel Sanz, E. Solano · 2017 · Scientific Reports
94. Oxide Resistive Memory with Functionalized Graphene as Built‐in Selector Element
    Yuchao Yang, Jihang Lee, Seunghyun Lee, Che‐Hung Liu, Zhaohui Zhong, Wei Dong Lu · 2014 · Advanced Materials
95. Silent Shredder
    Amro Awad, Pratyusa K. Manadhata, Stuart Haber, Yan Solihin, William G. Horne · 2016 · International Conference on Architectural Support for Programming Languages and Operating Systems (ASPLOS)
96. Tunable Synaptic Characteristics of a Ti/TiO2/Si Memory Device for Reservoir Computing
    Jinwoong Yang, Hyojong Cho, Hojeong Ryu, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim · 2021 · ACS Applied Materials & Interfaces
97. Advances in Flexible Memristors with Hybrid Perovskites
    Himangshu Jyoti Gogoi, Kunal Bajpai, Arun Tej Mallajosyula, Ankur Solanki · 2021 · The Journal of Physical Chemistry Letters
98. Rewritable, Moldable, and Flexible Sticker‐Type Organic Memory on Arbitrary Substrates
    Ying‐Chih Lai, Yi‐Xiang Wang, Yi‐Chuan Huang, Tai‐Yuan Lin, Ya‐Ping Hsieh, Ying Jay Yang, Yang‐Fang Chen · 2013 · Advanced Functional Materials
99. Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering
    Victor Yi-Qian Zhuo, Yu Jiang, Minghua Li, Eng Keong Chua, Zheng Zhang, Jing Pan, Rong Juan Zhao, Luping Shi, Tow Chong Chong, John Robertson · 2013 · Applied Physics Letters
100. Enabling an Integrated Rate-temporal Learning Scheme on Memristor
     Wei He, Kejie Huang, Ning Ning, Kiruthika Ramanathan, Guoqi Li, Yu Jiang, Jia Yin Sze, Luping Shi, Rong Juan Zhao, Jing Pei · 2014 · Scientific Reports