The DOI matches its Crossref record; 35 of the 35 references it cites were found in a registry or an index.
Gate-tunable topological valley transport in bilayer graphene
Open accessAbstract
Bilayer graphene can host topological currents that are robust against defects and are associated with the electron valleys. It is now shown that electric fields can tune this topological valley transport over long distances at room temperature. Valley pseudospin, the quantum degree of freedom characterizing the degenerate valleys in energy bands1, is a distinct feature of two-dimensional Dirac materials1,2,3,4,5. Similar to spin, the valley pseudospin is spanned by a time-reversal pair of states, although the two valley pseudospin states transform to each other under spatial inversion. The breaking of inversion symmetry induces various valley-contrasted physical properties; for instance, valley-dependent topological transport is of both scientific and technological interest2,3,4,5. Bilayer graphene is a unique system whose intrinsic inversion symmetry can be controllably broken by a perpendicular electric field, offering a rare possibility for continuously tunable topological valley transport. We used a perpendicular gate electric field to break the inversion symmetry in bilayer graphene, and a giant nonlocal response was observed as a result of the topological transport of the valley pseudospin. We further showed that the valley transport is fully tunable by external gates, and that the nonlocal signal persists up to room temperature and over long distances. These observations challenge the current understanding of topological valley transport in a gapped system, and the robust topological transport may lead to future valleytronic applications.
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Cites
Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
Bernevig, B. A., Hughes, T. L., & Zhang, S.-C. (2006) · Science · doi:10.1126/science.1133734 · Cited by 7,090
Quantum Spin Hall Insulator State in HgTe Quantum Wells
König, M., Wiedmann, S., Brüne, C., Roth, A., Buhmann, H., Molenkamp, L. W., Qi, X.-L., & Zhang, S.-C. (2007) · Science · doi:10.1126/science.1148047 · Cited by 6,151
Berry phase effects on electronic properties
Xiao, D., Chang, M.-C., & Niu, Q. (2010) · Reviews of Modern Physics · doi:10.1103/revmodphys.82.1959 · Cited by 5,277
Self-citationCoupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides
Xiao, D., Liu, G.-B., Feng, W., Xu, X., & Yao, W. (2012) · Physical Review Letters · doi:10.1103/physrevlett.108.196802 · Cited by 5,152
Self-citationNagaosa, N., Sinova, J., Onoda, S., MacDonald, A. H., & Ong, N. P. (2010) · Reviews of Modern Physics · doi:10.1103/revmodphys.82.1539 · Cited by 4,798
Direct observation of a widely tunable bandgap in bilayer graphene
Zhang, Y., Tang, T.-T., Girit, C., Hao, Z., Martin, M. C., Zettl, A., Crommie, M. F., Shen, Y. R., & Wang, F. (2009) · Nature · doi:10.1038/nature08105 · Cited by 3,669
Self-citationOne-Dimensional Electrical Contact to a Two-Dimensional Material
Wang, L., Meric, I., Huang, P. Y., Gao, Q., Gao, Y., Tran, H., Taniguchi, T., Watanabe, K., Campos, L. M., Muller, D. A., et al. (2013) · Science · doi:10.1126/science.1244358 · Cited by 3,042
Self-citationSpin and pseudospins in layered transition metal dichalcogenides
Xu, X., Yao, W., Xiao, D., & Heinz, T. F. (2014) · Nature Physics · doi:10.1038/nphys2942 · Cited by 2,855
Self-citationValley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport
Xiao, D., Yao, W., & Niu, Q. (2007) · Physical Review Letters · doi:10.1103/physrevlett.99.236809 · Cited by 2,296
Self-citationThe valley Hall effect in MoS 2 transistors
Mak, K. F., McGill, K. L., Park, J., & McEuen, P. L. (2014) · Science · doi:10.1126/science.1250140 · Cited by 1,915
Cited by
Schaibley, J. R., Yu, H., Clark, G., Rivera, P., Ross, J. S., Seyler, K. L., Yao, W., & Xu, X. (2016) · Nature Reviews Materials · doi:10.1038/natrevmats.2016.55 · Cited by 2,652
Self-citationObservation of Photonic Topological Valley Hall Edge States
Noh, J., Huang, S., Chen, K. P., & Rechtsman, M. C. (2018) · Physical Review Letters · doi:10.1103/physrevlett.120.063902 · Cited by 437
Gobbi, M., Orgiu, E., & Samorì, P. (2018) · Advanced Materials · doi:10.1002/adma.201706103 · Cited by 267
Room-temperature valleytronic transistor
Li, L., Shao, L., Liu, X., Gao, A., Wang, H., Zheng, B., Hou, G., Shehzad, K., Yu, L., Miao, F., et al. (2020) · Nature Nanotechnology · doi:10.1038/s41565-020-0727-0 · Cited by 161
Midinfrared Plasmonic Valleytronics in Metagate-Tuned Graphene
Jung, M., Fan, Z., & Shvets, G. (2018) · Physical Review Letters · doi:10.1103/physrevlett.121.086807 · Cited by 65
Metadata
- Authors
- Sui, M., Chen, G., Ma, L., Shan, W.-Y., Tian, D., Watanabe, K., Taniguchi, T., Jin, X., Yao, W., Xiao, D., & Zhang, Y.
- Venue
- Nature Physics
- Published
- 2015-09-28
- Volume
- 11
- Issue
- 12
- Pages
- 1027-1031
- ISSN
- 1745-2473 (ISSN-L)
- 1745-2481
- OpenAlex
- W1544968860
- Cited by
- 388
- References
- 35
- FWCI
- 20.55
- Type
- journal article
- Language
- en
- Open access
- green
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