Cited by 157Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesPerovskite Materials and Applications

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Linearly programmable two-dimensional halide perovskite memristor arrays for neuromorphic computing

Abstract

The exotic properties of three-dimensional halide perovskites, such as mixed ionic-electronic conductivity and feasible ion migration, have enabled them to challenge traditional memristive materials. However, the poor moisture stability and difficulty in controlling ion transport due to their polycrystalline nature have hindered their use as a neuromorphic hardware. Recently, two-dimensional (2D) halide perovskites have emerged as promising artificial synapses owing to their phase versatility, microstructural anisotropy in electrical and optoelectronic properties, and excellent moisture resistance. However, their asymmetrical and nonlinear conductance changes still limit the efficiency of training and accuracy of inference. Here we achieve highly linear and symmetrical conductance changes in Dion-Jacobson 2D perovskites. We further build a 7 × 7 crossbar array based on analogue perovskite synapses, achieving a high device yield, low variation with synaptic weight storing capability, multi-level analogue states with long retention, and moisture stability over 7 months. We explore the potential of such devices in large-scale image inference via simulations and show an accuracy within 0.08% of the theoretical limit. The excellent device performance is attributed to the elimination of gaps between inorganic layers, allowing the halide vacancies to migrate homogeneously regardless of grain boundaries. This was confirmed by first-principles calculations and experimental analysis.

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Crossref · 10.1038/s41565-024-01790-3

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  • A 7 × 7 crossbar array with analog perovskite synapses demonstrated high yield, low variation, long retention of multi-level states, and moisture stability for up to 7 months.

    “A 7 × 7 crossbar array with analog perovskite synapses demonstrated high yield, low variation, long retention of multi-level states, and moisture stability for up to 7 months.”
  • Kim et al. achieved linear and symmetrical conductance changes in Dion-Jacobson 2D perovskites.

    “Kim et al. [232] achieved linear and symmetrical conductance changes in Dion-Jacobson 2D perovskites.”
  • Large-scale image inference simulations based on artificial neural networks demonstrated only a 0.08% deviation from the theoretical accuracy limit.

    “Large-scale image inference simulations based on artificial neural networks demonstrated only a 0.08% deviation from the theoretical accuracy limit.”

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Metadata

Authors
Kim, S. J., Im, I. H., Baek, J. H., Choi, S., Park, S. H., Lee, D. E., Kim, J. Y., Kim, S. Y., Park, N.-G., Lee, D., Yang, J. J., & Jang, H. W.
Affiliations
  • University of Southern California (US)
  • Seoul National University (KR)
  • Pohang University of Science and Technology (KR)
  • Sungkyunkwan University (KR)
Corresponding author
  • Lee, Donghwa
  • Yang, J. Joshua
  • Jang, Ho Won
Venue
Nature Nanotechnology
Published
2024-10-18
Volume
20
Issue
1
Pages
83-92
ISSN
  • 1748-3387 (ISSN-L)
  • 1748-3395
OpenAlex
W4403547493
Cited by
157
References
2
Citations by year
2026: 72 · 2025: 84 · 2024: 1
FWCI
16.24
Type
journal article
Language
en
Open access
closed
Locations
  • Nature Nanotechnology (publishedVersion)
  • PubMed (publishedVersion)
Funders
  • National Research Foundation of Korea (RS-2024-00405016, 2021R1A2B5B03001851, 2022R1A6A3A1306017211)
  • AI Institute at Seoul National University
  • National Science Foundation (2023752)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Perovskite Materials and Applications
Keywords
two-dimensional halide perovskites, memristors, neuromorphic computing, artificial synapses, crossbar arrays, humidity stability, halide vacancies, ion migration, grain boundaries, mixed ionic-electronic conduction

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