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Cited by 316

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A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

Open access
Wan, Xia, Xu, Yang, Guo, Hongwei, Shehzad, Khurram, Ali, Ayaz, Liu, Yuan, Yang, Jianyi, Dai, Daoxin, Lin, Cheng-Te, Liu, Liwei, Cheng, Hung-Chieh, Wang, Fengqiu, Wang, Xiaomu, Lu, Hai, Hu, Weida, Pi, Xiaodong, Dan, Yaping, Luo, Jikui, Hasan, Tawfique, Duan, Xiangfeng, Li, Xinming, Xu, Jianbin, Yang, Deren, Ren, Tianling, Yu, Bin·2017·npj 2D Materials and Applications

Abstract

We present a self-powered, high-performance graphene-enhanced ultraviolet silicon Schottky photodetector. Different from traditional transparent electrodes, such as indium tin oxides or ultra-thin metals, the unique ultraviolet absorption property of graphene leads to long carrier life time of hot electrons that can contribute to the photocurrent or potential carrier-multiplication. Our proposed structure boosts the internal quantum efficiency over 100%, approaching the upper-limit of silicon-based ultraviolet photodetector. In the near-ultraviolet and mid-ultraviolet spectral region, the proposed ultraviolet photodetector exhibits high performance at zero-biasing (self-powered) mode, including high photo-responsivity (0.2 A W−1), fast time response (5 ns), high specific detectivity (1.6 × 10 13 Jones), and internal quantum efficiency greater than 100%. Further, the photo-responsivity is larger than 0.14 A W−1 in wavelength range from 200 to 400 nm, comparable to that of state-of-the-art Si, GaN, SiC Schottky photodetectors. The photodetectors exhibit stable operations in the ambient condition even 2 years after fabrication, showing great potential in practical applications, such as wearable devices, communication, and “dissipation-less” remote sensor networks.

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Metadata

Authors
Wan, X., Xu, Y., Guo, H., Shehzad, K., Ali, A., Liu, Y., Yang, J., Dai, D., Lin, C.-T., Liu, L., Cheng, H.-C., Wang, F., Wang, X., Lu, H., Hu, W., Pi, X., Dan, Y., Luo, J., Hasan, T., Duan, X., Li, X., Xu, J., Yang, D., Ren, T., & Yu, B.
Venue
npj 2D Materials and Applications
Published
2017-04-11
Volume
1
Issue
1
ISSN
2397-7132 (ISSN-L)
OpenAlex
W2606810695
Cited by
316
References
38
FWCI
13.76
Type
journal article
Language
en
Open access
gold

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CoChat. (2026). Citation check: A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon? https://app.cochat.ai/papers/10.1038/s41699-017-0008-4
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Wan, X., Xu, Y., Guo, H., Shehzad, K., Ali, A., Liu, Y., Yang, J., Dai, D., Lin, C.-T., Liu, L., Cheng, H.-C., Wang, F., Wang, X., Lu, H., Hu, W., Pi, X., Dan, Y., Luo, J., Hasan, T., . . . Yu, B. (2017). A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon? npj 2D Materials and Applications. https://doi.org/10.1038/s41699-017-0008-4

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.