The DOI matches its Crossref record; 19 of the 19 references it cites were found in a registry or an index.
Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
Open accessAbstract
Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar transistors to investigate charge transport both in the conduction band and in the valence band. Although n-type transistor operation for single-layer and few-layer MoS2 with gold source and drain contacts was recently demonstrated, transport in the valence band has been elusive for solid-state devices. Here we show that a multi-layer MoS2 channel can be hole-doped by palladium contacts, yielding MoS2 p-type transistors. When two different materials are used for the source and drain contacts, for example hole-doping Pd and electron-doping Au, the Schottky junctions formed at the MoS2 contacts produce a clear photovoltaic effect.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010) · Physical Review Letters · doi:10.1103/physrevlett.105.136805 · Cited by 15,586
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V., & Kis, A. (2011) · Nature Nanotechnology · doi:10.1038/nnano.2010.279 · Cited by 14,939
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Emerging Photoluminescence in Monolayer MoS2
Splendiani, A., Sun, L., Zhang, Y., Li, T., Kim, J., Chim, C.-Y., Galli, G., & Wang, F. (2010) · Nano Letters · doi:10.1021/nl903868w · Cited by 9,501
The work function of the elements and its periodicity
Michaelson, H. B. (1977) · Journal of Applied Physics · doi:10.1063/1.323539 · Cited by 4,289
Single-Layer MoS2Phototransistors
Yin, Z., Li, H., Li, H., Jiang, L., Shi, Y., Sun, Y., Lu, G., Zhang, Q., Chen, X., & Zhang, H. (2012) · ACS Nano · doi:10.1021/nn2024557 · Cited by 3,493
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Das, S., Chen, H.-Y., Penumatcha, A. V., & Appenzeller, J. (2013) · Nano Letters · doi:10.1021/nl303583v · Cited by 2,428
Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2
Kuc, A., Zibouche, N., & Heine, T. (2011) · Physical Review B · doi:10.1103/physrevb.83.245213 · Cited by 1,753
Li, H., Yin, Z., He, Q., Li, H., Huang, X., Lu, G., Fam, D. W. H., Tok, A. I. Y., Zhang, Q., & Zhang, H. (2012) · Small · doi:10.1002/smll.201101016 · Cited by 1,536
Cited by
Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
Mak, K. F., & Shan, J. (2016) · Nature Photonics · doi:10.1038/nphoton.2015.282 · Cited by 3,819
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
Furchi, M. M., Pospischil, A., Libisch, F., Burgdörfer, J., & Mueller, T. (2014) · Nano Letters · doi:10.1021/nl501962c · Cited by 1,085
Photocurrent generation with two-dimensional van der Waals semiconductors
Buscema, M., Island, J. O., Groenendijk, D. J., Blanter, S. I., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00106d · Cited by 1,051
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Metadata
- Authors
- Fontana, M., Deppe, T., Boyd, A. K., Rinzan, M., Liu, A. Y., Paranjape, M., & Barbara, P.
- Venue
- Scientific Reports
- Published
- 2013-04-09
- Volume
- 3
- Issue
- 1
- Pages
- 1634-1634
- ISSN
- 2045-2322 (ISSN-L)
- OpenAlex
- W1974974080
- Cited by
- 517
- References
- 19
- FWCI
- 30.49
- Type
- journal article
- Language
- en
- Open access
- gold
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions. https://app.cochat.ai/papers/10.1038/srep01634
- The paper
- Fontana, M., Deppe, T., Boyd, A. K., Rinzan, M., Liu, A. Y., Paranjape, M., & Barbara, P. (2013). Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions. Scientific Reports. https://doi.org/10.1038/srep01634
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
