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Cited by 204

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Direct Growth of Vertically-oriented Graphene for Field-Effect Transistor Biosensor

Open access
Mao, Shun, Yu, Kehan, Chang, Jingbo, Steeber, Douglas A., Ocola, Leonidas E., Chen, Junhong·2013·Scientific Reports

Abstract

A sensitive and selective field-effect transistor (FET) biosensor is demonstrated using vertically-oriented graphene (VG) sheets labeled with gold nanoparticle (NP)-antibody conjugates. VG sheets are directly grown on the sensor electrode using a plasma-enhanced chemical vapor deposition (PECVD) method and function as the sensing channel. The protein detection is accomplished through measuring changes in the electrical signal from the FET sensor upon the antibody-antigen binding. The novel biosensor with unique graphene morphology shows high sensitivity (down to ~2 ng/ml or 13 pM) and selectivity towards specific proteins. The PECVD growth of VG presents a one-step and reliable approach to prepare graphene-based electronic biosensors.

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Metadata

Authors
Mao, S., Yu, K., Chang, J., Steeber, D. A., Ocola, L. E., & Chen, J.
Venue
Scientific Reports
Published
2013-04-22
Volume
3
Issue
1
Pages
1696-1696
ISSN
2045-2322 (ISSN-L)
OpenAlex
W2010479193
Cited by
204
References
1
FWCI
12.58
Type
journal article
Language
en
Open access
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CoChat. (2026). Citation check: Direct Growth of Vertically-oriented Graphene for Field-Effect Transistor Biosensor. https://app.cochat.ai/papers/10.1038/srep01696
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Mao, S., Yu, K., Chang, J., Steeber, D. A., Ocola, L. E., & Chen, J. (2013). Direct Growth of Vertically-oriented Graphene for Field-Effect Transistor Biosensor. Scientific Reports. https://doi.org/10.1038/srep01696

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