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Cited by 8822D Materials and ApplicationsGraphene research and applicationsTransition Metal Oxide Nanomaterials

Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films

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Yu, Yifei, Li, Chun, Liu, Yi, Su, Liqin, Zhang, Yong, Cao, Linyou·2013·Scientific Reports
DOI 10.1038/srep01866PMC PMC3659320
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Abstract

Two dimensional (2D) materials with a monolayer of atoms represent an ultimate control of material dimension in the vertical direction. Molybdenum sulfide (MoS2) monolayers, with a direct bandgap of 1.8 eV, offer an unprecedented prospect of miniaturizing semiconductor science and technology down to a truly atomic scale. Recent studies have indeed demonstrated the promise of 2D MoS2 in fields including field effect transistors, low power switches, optoelectronics, and spintronics. However, device development with 2D MoS2 has been delayed by the lack of capabilities to produce large-area, uniform, and high-quality MoS2 monolayers. Here we present a self-limiting approach that can grow high quality monolayer and few-layer MoS2 films over an area of centimeters with unprecedented uniformity and controllability. This approach is compatible with the standard fabrication process in semiconductor industry. It paves the way for the development of practical devices with 2D MoS2 and opens up new avenues for fundamental research.

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  • CVD is an ideal method to prepare high-quality, few-defect MoS2 nanosheets with controllable layer numbers on different substrates.

    “CVD is an ideal method to prepare high-quality, few-defect MoS 2 nanosheets with controllable layer numbers on different substrates. [ 77-80 ]”

    From 2D Transition‐Metal‐Dichalcogenide‐Nanosheet‐Based Composites for Photocatalytic and Electrocatalytic Hydrogen Evolution Reactions (2016) · cites this paper as [79]

    The Abstract and Results (pages unavailable) report a self-limiting CVD approach that grows high-quality monolayer and few-layer MoS2 films on silicon oxide, sapphire, and graphite with precisely controlled layer numbers. The Results describe good crystalline quality, but do not establish that the films have few defects; the paper demonstrates this particular CVD approach rather than CVD methods generally. (LLM, conf=0.84)

    Experimental — accuracy not yet measured

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Cited by

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Authors
Yu, Y., Li, C., Liu, Y., Su, L., Zhang, Y., & Cao, L.
Affiliations
  • North Carolina State University (US)
  • University of North Carolina at Charlotte (US)
Corresponding author
Cao, Linyou
ORCID
Venue
Scientific Reports
Publisher
Springer Science and Business Media LLC
Published
2013-05-21
Volume
3
Issue
1
Pages
1866-1866
ISSN
2045-2322 (ISSN-L)
DOI
10.1038/srep01866
PMC
PMC3659320
OpenAlex
W2157905510
Cited by
882
References
2
Citations by year
2026: 15 · 2025: 25 · 2024: 48 · 2023: 55 · 2022: 47 · 2021: 48 · 2020: 76 · 2019: 77 · 2018: 95 · 2017: 115 · 2016: 106 · 2015: 96 · 2014: 71 · 2013: 8
FWCI
42.30
Type
journal article
Language
en
Open access
Licence
Locations
  • Scientific Reports (publishedVersion, cc-by-nc-nd)
  • Europe PMC (PubMed Central) (publishedVersion, cc-by-nc-nd)
  • PubMed Central (publishedVersion, cc-by-nc-nd)
  • PubMed (publishedVersion)
Funders
  • Oak Ridge Associated Universities
  • Army Research Office (W911NF, W911NF-11)
Topics
  • Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
  • Physical Sciences › Materials Science › Materials Chemistry › Graphene research and applications
  • Physical Sciences › Materials Science › Polymers and Plastics › Transition Metal Oxide Nanomaterials
Keywords
MoS2, monolayer MoS2, two-dimensional materials, scalable synthesis, self-limiting growth, direct bandgap semiconductors
MeSH terms
Aluminum Oxide, Disulfides, Equipment Design, Graphite, Molybdenum, Semiconductors, Silicon Dioxide, Surface Properties

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