Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics – a Comparative Study with Gallium Nitride
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Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN) – another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics.
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The Kc of ZnO determined from the elliptical-beam method (56 W m-1 K-1) is slightly lower than a first-principles calculation in literature (62 W m-1 K-1) but is consistent with another TDTR measurement of Kz of ZnO [0001] (55 W m-1 K-1).
“The Kc of ZnO determined from the elliptical-beam method (56 W m -1 K -1 ) is slightly lower than a first-principles calculation in literature (62 W m -1 K -1 ) 195 but is consistent with another TDTR measurement of Kz of ZnO [0001] (55 W m -1 K -1 ) 37 , which has its c -axis along the through-plane direction.”
From Tutorial: Time-domain thermoreflectance (TDTR) for thermal property characterization of bulk and thin film materials (2018) · cites this paper as [195]
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- Authors
- Wu, X., Lee, J., Varshney, V., Wohlwend, J. L., Roy, A. K., & Luo, T.
- Affiliations
- University of Notre Dame (US)
- United States Air Force Research Laboratory (US)
- Corresponding author
- Luo, Tengfei
- Venue
- Scientific Reports
- Published
- 2016-03-01
- Volume
- 6
- Issue
- 1
- Pages
- 22504-22504
- ISSN
- 2045-2322 (ISSN-L)
- PMC
- PMC4772549
- OpenAlex
- W2289156364
- Cited by
- 189
- References
- 6
- Citations by year
- 2026: 11 · 2025: 21 · 2024: 21 · 2023: 17 · 2022: 16 · 2021: 24 · 2020: 18 · 2019: 20 · 2018: 21 · 2017: 16 · 2016: 4
- FWCI
- 9.06
- Type
- journal article
- Language
- en
- Open access
- gold
- doi.org
- Locations
- Scientific Reports (publishedVersion, cc-by)
- PubMed Central (publishedVersion, cc-by)
- PubMed (publishedVersion)
- Funders
- National Science Foundation (TG-CTS100078, 1433490)
- San Diego Supercomputer Center
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
- Physical Sciences › Materials Science › Materials Chemistry › ZnO doping and properties
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Keywords
- thermal conductivity, phonon transport, phonon group velocity, anharmonic phonon scattering, three-phonon scattering, phonon dispersion, size effect, wide bandgap semiconductors
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