The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits
Abstract
Two-dimensional (2D) layered semiconductors are very promising for post-silicon ultrathin channels and flexible electronics due to the remarkable dimensional and mechanical properties. Besides molybdenum disulfide (MoS2), the first recognized 2D semiconductor, it is also important to explore the wide spectrum of layered metal chalcogenides (LMCs) and to identify possible compounds with high performance. Here we report the fabrication of high-performance top-gated field-effect transistors (FETs) and related logic gates from monolayer tin disulfide (SnS2), a non-transition metal dichalcogenide. The measured carrier mobility of our monolayer devices reaches 50 cm(2) V(-1) s(-1), much higher than that of the back-gated counterparts (~1 cm(2) V(-1) s(-1)). Based on a direct-coupled FET logic technique, advanced Boolean logic gates and operations are also implemented, with a voltage gain of 3.5 and output swing of >90% for the NOT and NOR gates, respectively. The superior electrical and integration properties make monolayer SnS2 a strong candidate for next-generation atomic electronics.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Cited by
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
Wide Band Gap Chalcogenide Semiconductors
Woods-Robinson, R., Han, Y., Zhang, H., Ablekim, T., Khan, I., Persson, K. A., & Zakutayev, A. (2020) · Chemical Reviews · doi:10.1021/acs.chemrev.9b00600 · Cited by 513
Large‐Size Growth of Ultrathin SnS2 Nanosheets and High Performance for Phototransistors
Zhou, X., Zhang, Q., Gan, L., Li, H., & Zhai, T. (2016) · Advanced Functional Materials · doi:10.1002/adfm.201600318 · Cited by 361
Metadata
- Authors
- Song, H. S., Li, S. L., Gao, L., Xu, Y., Ueno, K., Tang, J., Cheng, Y. B., & Tsukagoshi, K.
- Venue
- Nanoscale
- Publisher
- Royal Society of Chemistry (RSC)
- Published
- 2013
- Volume
- 5
- Issue
- 20
- Pages
- 9666
- ISSN
- 2040-3364 (ISSN-L)
- 2040-3372
- OpenAlex
- W2170412441
- Cited by
- 307
- References
- 2
- FWCI
- 8.29
- Type
- journal article
- Language
- en
- Open access
- closed
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- Song, H. S., Li, S. L., Gao, L., Xu, Y., Ueno, K., Tang, J., Cheng, Y. B., & Tsukagoshi, K. (2013). High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits. Nanoscale. https://doi.org/10.1039/c3nr01899g
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