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Cited by 94

The DOI matches its Crossref record.

Review of series and parallel connection of IGBTs

Shammas, N.Y.A., Withanage, R., Chamund, D.·2006·IEE Proceedings - Circuits, Devices and Systems
DOI 10.1049/ip-cds:20050053
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Abstract

The availability of high power handling devices is of a great importance in the present power electronics industry. These high power ratings can be achieve by connecting existing devices in series or parallel depending on the application. The main problems associated with series and parallel connections are unequal sharing of voltage and current respectively. The active gate control techniques, snubber circuits and clamping circuits are some of the most common methods used to minimise the problem of unequal sharing of voltage and current. The aim of the paper is to review the available techniques to minimise the problems in series and parallel connections of insulated gate bipolar transistors.

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Crossref · 10.1049/ip-cds:20050053

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Citations

Cites

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Research works printed but not linked: 22

  1. Shakweh, 1999, Annual Power Electronics Specialist Conf., 2, 965, 10.1109/PESC.1999.785628 · DOI
  2. Chen, 1996, Proc. IEEE IECON 22nd Int. Conf., 2, 999
  3. Consoli, 1995, Conference Record of the Industry Applications Conf., 3, 2752
  4. Gerster, 1994, Conf. Proc. Applied Power Electronics Conf., 1, 469
  5. 10.1109/41.925575 · DOI
  6. 10.1109/63.602558 · DOI
  7. Palmer, 1996, Sixth Int. Conf. on Power Electronics and Variable Speed Drives, 236, 10.1049/cp:19960919 · DOI
  8. Hong, 1999, Proc. IEEE Int. Conf. on Power Electronics and Drive Systems, 2, 646, 10.1109/PEDS.1999.792747 · DOI
  9. 10.1109/28.968198 · DOI
  10. Katoh, 2002, IEEE 33rd Power Electronics Specialist Conf., 2, 609
  11. Bruckmann, 1998, Industry Applications Conf., 2, 1067
  12. Sasagawa, 2002, Conf. Record of the Industry Applications Conf., 4, 2597
  13. Saiz, Oct.2001, Conf. Record of the Industry Applications Conf. 2001, 2, 1046
  14. Piazzesi, 2004, IEEE 35th Annual Power Electronics Specialists Conf., 2004, 2, 893, 10.1109/PESC.2004.1355537 · DOI
  15. Busatto, 1998, Industry Applications Conf., 2, 825
  16. Nakatake, 2003, IEEE 34th Annual Power Electronics Specialist Conf., 4, 1910
  17. Chamund, 2002, Int. Universities Power Engineering Conf. (UPEC), 262
  18. 10.1109/28.126748 · DOI
  19. Hofer, 1996, Annual IEEE Power Electronics Specialist Conf., 2, 1312, 10.1109/PESC.1996.548751 · DOI · Paper page
  20. Benda, V., Gower, J., and Grant, D.A.: ‘Power semiconductor devices, theory and applications’, (John Wiley and Sons 1999)
  21. Belverde, 1998, IEEE Industry Applications Conf., 2, 817
  22. 10.1049/ip-cds:19982123 · DOI

Cited by

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Metadata

Authors
Shammas, N. Y. A., Withanage, R., & Chamund, D.
Venue
IEE Proceedings - Circuits, Devices and Systems
Publisher
Institution of Engineering and Technology (IET)
Published
2006
Volume
153
Issue
1
Pages
34
ISSN
1350-2409
DOI
10.1049/ip-cds:20050053
Cited by
94
References
0
Language
en

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CoChat. (2026). Citation check: Review of series and parallel connection of IGBTs. https://app.cochat.ai/papers/10.1049/ip-cds:20050053
The paper
Shammas, N. Y. A., Withanage, R., & Chamund, D. (2006). Review of series and parallel connection of IGBTs. IEE Proceedings - Circuits, Devices and Systems. https://doi.org/10.1049/ip-cds%3A20050053

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.