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Resistivity of chemical vapor deposited diamond films
Abstract
Diamond films grown by plasma chemical vapor deposition techniques display a fairly low resistivity (∼106 Ω cm). Heat treating the films causes an increase in the resistivity by up to six orders of magnitude. The low resistivity of the as-grown films is postulated to be due to hydrogen passivation of traps in the films. Annealing causes dehydrogenation resulting in the electrical activation of deep traps with an attendant increase in the resistivity. This mechanism has been confirmed by an observed reduction of the resistivity of the heat-treated films when they are subjected to a plasma hydrogen treatment.
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Cited by
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Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., et al. (2018) · Advanced Electronic Materials · doi:10.1002/aelm.201600501 · Cited by 1,602
Conductive diamond: synthesis, properties, and electrochemical applications
Yang, N., Yu, S., Macpherson, J. V., Einaga, Y., Zhao, H., Zhao, G., Swain, G. M., & Jiang, X. (2019) · Chemical Society Reviews · doi:10.1039/c7cs00757d · Cited by 522
Chemical control of the charge state of nitrogen-vacancy centers in diamond
Hauf, M. V., Grotz, B., Naydenov, B., Dankerl, M., Pezzagna, S., Meijer, J., Jelezko, F., Wrachtrup, J., Stutzmann, M., Reinhard, F., et al. (2011) · Physical Review B · doi:10.1103/physrevb.83.081304 · Cited by 379
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Metadata
- Authors
- Landstrass, M. I., & Ravi, K. V.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1989-09-04
- Volume
- 55
- Issue
- 10
- Pages
- 975-977
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1977336820
- Cited by
- 505
- References
- 0
- FWCI
- 14.78
- Type
- journal article
- Language
- en
- Open access
- closed
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- Landstrass, M. I., & Ravi, K. V. (1989). Resistivity of chemical vapor deposited diamond films. Applied Physics Letters. https://doi.org/10.1063/1.101694
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.